2N7002 - Diodes Incorporated

1 2N7002 Document number: DS11303 Rev. 35 - 2 1 of 5 July 2018 Diodes Incorporated 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS RDS(ON) Max ID Max TA = +25 C 60V @ VGS = 5V 210mA Description and applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications . Motor Control Power Management Functions Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

2 Green Device (Notes 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: grams (Approximate) Ordering Information (Note 5) Part Number Compliance Case Packaging 2N7002 -7-F Standard SOT23 3,000/Tape & Reel 2N7002 -13-F Standard SOT23 10,000/Tape & Reel 2N7002Q-7-F Automotive SOT23 3,000/Tape & Reel Notes: 1.

3 No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.

4 For more information, please refer to 5. For packaging details, go to our website at Marking Information Date Code Key Year 2002 ~ 2018 2019 2020 2021 2022 2023 2024 2025 2026 Code N ~ F G H I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT23 Top View Equivalent Circuit Top View DGSK72 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: F = 2018) M = Month (ex: 9 = September) SourceGateDrainYK72 YMe3 2N7002 Document number: DS11303 Rev.

5 35 - 2 2 of 5 July 2018 Diodes Incorporated 2N7002 Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS 20 40 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25 C TA = +85 C TA = +100 C ID 170 120 105 mA Continuous Drain Current (Note 7)

6 VGS = 10V Steady State TA = +25 C TA = +85 C TA = +100 C ID 210 150 135 mA Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Continuous IS 2 A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 800 mA Thermal Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 370 mW (Note 7) 540 Thermal Resistance, Junction to Ambient (Note 6) R JA 348 C/W (Note 7) 241 Thermal Resistance, Junction to Case (Note 7) R JC 91 Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25 C, unless otherwise specified.)

7 Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10 A Zero Gate Voltage Drain Current @ TC = +25 C @ TC = +125 C IDSS 500 A VDS = 60V, VGS = 0V Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) V VDS = VGS, ID = 250 A Static Drain-Source On-Resistance @ TJ = +25 C @ TJ = +25 C @ TJ = +125 C RDS(ON) VGS = , ID = VGS = 10V, ID = VGS = 10V, ID = On-State Drain Current ID(ON)

8 A VGS = 10V, VDS = Forward Transconductance gFS 80 mS VDS =10V, ID = Diode Forward Voltage VSD V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 22 50 pF VDS = 25V, VGS = 0V f = Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss pF Gate Resistance Rg 120 VDS = 0V, VGS = 0V, f = Total Gate Charge (VGS = ) Qg 223 pC VDS = 10V, ID = 250mA Gate-Source Charge Qgs 82 Gate-Drain Charge Qgd 178 SWITCHING CHARACTERISTICS (Note 9) Turn-On Delay Time tD(ON) ns VDD = 30V, ID = , RL = 150 , VGEN = 10V, RGEN = 25 Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Notes: 6.

9 Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2N7002 Document number: DS11303 Rev. 35 - 2 3 of 5 July 2018 Diodes Incorporated 2N7002 , DRAIN-SOURCE VOLTAGE (V)Fig. 1 On-Region CharacteristicsDSI, DRAIN-SOURCE CURRENT (A)D , DRAIN CURRENT (A)Fig. 2 On-Resistance vs. Drain , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ()DS(ON) , JUNCTION TEMPERATURE ( C)Fig.

10 3 On-Resistance vs. Junction Temperaturej V = 10V,I = 200mAGSDR, STATIC DRAIN-SOURCE ON-RESISTANCE ()DS(ON) 0V , GATE TO SOURCE VOLTAGE (V)Fig. 4 On-Resistance vs. Gate-Source VoltageGSI = 50mAD I = 500mAD 123456024681012141618R, NORMALIZED DRAIN-SOURCE ON-RESISTANCE ()DS(ON) GATE SOURCE CURRENT (V)GS,I , DRAIN CURRENT (A)Fig. 5 typical Transfer CharacteristicsD6587109 0501001502002503003500255075100125150175 200P, POWER DISSIPATION (mW)dT , AMBIENT TEMPERATURE ( C)Fig. 6 Max Power Dissipation vs. Ambient TemperatureA 400 2N7002 Document number: DS11303 Rev.