Transcription of 2N7002 - Diodes Incorporated
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2N7002 - Diodes Incorporated
2N7002 Document number: DS11303 Rev. 35 - 2 1 of 5 July 2018 Diodes Incorporated 2N7002 N- channel enhancement MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS RDS(ON) Max ID Max TA = +25 C 60V @ VGS = 5V 210mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Notes 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Plated Leads.
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS. RDS(ON) Max . I. D. Max T. A = +25°C . 60V . 5Ω @ V. GS = 10V •210mA 7.5Ω @ V. GS = 5V 170mA . control (i. AEC. Description and Applications : This MOSFET has been designed to minimize the on-state resistance (R: DS(on)) and yet maintain superior switching ...
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