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AND9093 - Using MOSFETs in Load Switch Applications

www.onsemi.com

Using MOSFETs in Load Switch Applications Introduction In today’s market, power management is more important than ever. Portable systems strive to extend battery life while meeting an ever increasing demand for higher performance. Load switches provide a simple and inexpensive method for the system to make the appropriate power management

  Applications, Switch, Power, Load, Mosfets, Mosfets in load switch applications

Linear Power MOSFETs App Note - IXYS Corporation

www.ixys.com

Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 The FBSOA is a datasheet figure of merit that defines the maximum allowed operating

  Notes, Linear, Power, Mosfets, Linear power mosfets app note

Class D Amplifier Design Basics II - irf.com

www.irf.com

MOSFET Basics A MOSFET is a device to switch electronic current. A driving MOSFET ... To learn more about power MOSFETs, refer to AN-1084 Power MOSFET Basics. 14 Driving MOSFET for PWM ... AN-947 Understanding HEXFET Switching Performance. 24 …

  Basics, Understanding, Power, Mosfets, Power mosfet basics, Mosfet basics

Class D Audio Amplifier Design - irf.com

www.irf.com

Loss in Power Device ... For two IRF540 HEXFET® MOSFETs operated at 400kHz with Vgs = 12V, we have: PG = 2 • 12 • 37 • 10-9 • 400 • 103 = 0.36W System ÎGate Drive ÎMOSFET ÎDesign Example For more details on gate driver ICs, refer to AN978 . www.irf.com

  Power, Mosfets

N-Channel 100-V (D-S) MOSFET - Vishay - manufacturer of ...

www.vishay.com

Vishay Siliconix Si7456DP Document Number: 71603 S09-0271-Rev. F, 16-Feb-09 www.vishay.com 1 N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available † TrenchFET® Power MOSFETs † New Low Thermal Resistance PowerPAK®

  Vishay, Channel, Mosfets, N channel 100 v

30V, N-ChannelNexFET™ Power MOSFETs

www.ti.com

CSD17501Q5A SLPS303B – DECEMBER 2010– REVISED SEPTEMBER 2012 www.ti.com These devices have limited built-inESD protection. The leads should be …

  Power, Mosfets, Power mosfets

ZXM61P03F 30V P-channel enhancement mode MOSFET

www.diodes.com

1 SEMICONDUCTORS ZXM61P03F ISSUE 1 - OCTOBER 2005 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=-30V; R DS(ON)=0.35 ; I D=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique

  Dome, Enhancement, Channel, Mosfets, 30v p channel enhancement mode mosfet

100V Half-Bridge MOSFET Driver with Anti-Shoot-Through ...

ww1.microchip.com

2016 Microchip Technology Inc. DS20005575A-page 1 MIC4102 Features • Drives High- and Low-Side N-Channel MOSFETs with Single Input • Adaptive Anti-Shoot-Through Protection

  Protection, Through, Anti, Mosfets, Shoot, Anti shoot through protection

Performance and Ruggedness of 1200V SiC - Trench - …

www.broeselsworld.de

of the newly developed SiC Trench-MOSFET combining all these achievements. II. DEVICE CONCEPT A. Challenges compared to silicon-based MOSFETs Si and SiC both have a thermal oxide which is at a first glance the common way to create an almost ideal MOS interface. But there are some well-known challenges to making a SiC MOSFET.

  Performance, Mosfets, Trench, Combining, Ruggedness, 1200v, Sic mosfet, Performance and ruggedness of 1200v sic trench, Sic trench, Mosfet combining

Part II How to Design and Build Working Electronic Circuits

www-mdp.eng.cam.ac.uk

18.4.1 The Basics 18.4.2 Bipolar Drive 18.4.3 Half-stepping 18.4.4 Variable Reluctance Motor 18.4.5 Electrical and Mechanical Specifications 18.4.6 Stepper Motor Driver Circuit 18.5 Servo Motors 18.6 Choosing Power Electronics Components 18.6.1 MOSFETs 18.6.2 Diodes 18.6.3 MOSFET Drivers 18.6.4 Prepackaged Power Drivers

  Basics, Electronic, Mosfets

Chapter 1 Introduction to CMOS Circuit Design

www.ee.ncu.edu.tw

Switch: MOSFET MOSFETs are basic electronic devices used to direct and control logic signals in IC design MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor N-type MOS (NMOS) and P-type MOS (PMOS) Voltage-controlled switches A MOSFET has four terminals: gate, source, drain, and substrate (body) Complementary MOS (CMOS)

  Logic, Mosfets

100V Dual N-Channel MOSFET

www.aosmd.com

AO4892 100V Dual N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 4A R DS(ON) (at V GS =10V) < 68m Ω R DS(ON) (at V GS =4.5V) < 94m Ω 100% UIS Tested 100% R g Tested Symbol The AO4892 uses trench MOSFET technology that is

  Dual, Channel, V001, Mosfets, 100v dual n channel mosfet

IRFL4315 SMPS MOSFET - Infineon Technologies

www.irf.com

www.irf.com 1 06/14/02 IRFL4315 SMPS MOSFET HEXFET® Power MOSFET High frequency DC-DC converters Benefits Applications Low Gate to Drain Charge to Reduce Switching Losses

  Mosfets, Smps, Irfl4315 smps mosfet, Irfl4315

NTF3055L108, NVF3055L108 Power MOSFET

www.onsemi.com

NTF3055L108, NVF3055L108 www.onsemi.com 4 TYPICAL ELECTRICAL CHARACTERISTICS 10 10 155250205 RDS(on) LIMIT V GS 10 1 0.1 0.001 1000 10 1 6 5 …

  Power, Mosfets, Power mosfets

PD - 91385B IRF5305 - redrok.com

www.redrok.com

IRF5305 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) † ––– ––– p-n junction diode.

  Body, Diode, Mosfets, Irf5305, Body diode

Power MOSFET - Vishay

www.vishay.com

Document Number: 91238 www.vishay.com S11-0444-Rev. B, 14-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HERE IN AND THIS ...

  Power, Vishay, Mosfets, Power mosfets

N-Channel 60 V (D-S) MOSFET - Vishay

www.vishay.com

Vishay Siliconix Package Information Document Number: 71196 09-Jul-01 www.vishay.com 1 SOT-23 (TO-236): 3-LEAD b 1E 1 3 2 S e e1 D A 2 A1 C Seating Plane 0.10 mm 0.004"

  Vishay, Channel, Mosfets, N channel 60 v

BTS 7960 - Robot Power

www.robotpower.com

High Current PN Half Bridge BTS 7960 Overview Data Sheet 3 Rev. 1.1, 2004-12-07 1Overview The BTS 7960 is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET

  Mosfets, 7960, Bts 7960

Is Now Part of - onsemi.com

www.onsemi.com

www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.5 • 9/4/13 AN-9010 MOSFET Basics Summary

  Summary, Mosfets

New High Current MOSFET Module Offers 177 µΩ RDS(on)

pwrx.com

New High Current MOSFET Module Offers 177 µΩ RDS(on) By William C. Kephart and Eric R. Motto MOSFET Module Structure The MOSFET Family consists of 200 ampere, 400 ampere and 600 ampere current rated modules at 75 volts, 100 volts and 150 volts. The entire family of modules shares the same package shown in figure 1.

  High, Current, Module, Offer, Mosfets, High current mosfet module offers 177

General Description Product Summary - Alpha and Omega ...

www.aosmd.com

AON7400A 30V N-Channel MOSFET General Description Product Summary VDS ID (at V GS =10V) 40A R DS(ON) (at V GS =10V) < 7.5mΩ R DS(ON) (at V GS = 4.5V) < 10.5mΩ 100% UIS Tested 100% R g Tested Symbol VDS • The AON7400A combines advanced trench MOSFET

  General, Product, Descriptions, Summary, Mosfets, General description product summary, Mosfet general description product summary

N-Channel Reduced Qg, Fast Switching MOSFET

www.vishay.com

Vishay Siliconix Si4800BDY Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available † TrenchFET® Power MOSFET † High-Efficient PWM Optimized

  Switching, Vishay, Reduced, Fast, Channel, Mosfets, Channel reduced qg, Fast switching mosfet

60V N-Channel MOSFET - Alpha & Omega Semiconductor

www.aosmd.com

AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V) < 24mΩ R DS(ON) (at V GS =4.5V) < 30mΩ 100% UIS Tested 100% R g Tested Symbol VDS VGS IDM IAS, I AR EAS, E AR TJ, T STG Symbol t ≤ 10s Steady-State Maximum Junction-to-Case Steady-State RθJC °C/W Maximum Junction-to-Ambient A D °C/W

  Channel, Mosfets, 60v n channel mosfet

IRFF130 Product Datasheet - Infineon Technologies

www.irf.com

Features Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors.

  Datasheet, Mosfets

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

www.vishay.com

SQ7415AEN www.vishay.com Vishay Siliconix S13-1891, Rev. C, 26-Aug-13 1 Document Number: 67042 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

  Vishay, Mosfets

PD - 91309C IRF3710

www.irf.com

2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode.

  Mosfets, Irf3710

N-Channel 2.5-V (G-S) MOSFET - Vishay Intertechnology

www.vishay.com

Document Number: 71831 S11-2000-Rev. J, 10-Oct-11 www.vishay.com 3 Vishay Siliconix Si2302ADS This document is subject to change without notice. THE PRODUCTS ...

  Vishay, Mosfets, Vishay intertechnology, Intertechnology, Com 3

N-Channel Enhancement Mode MOSFET - Sync Power

www.syncpower.com

2017/12/04 Ver 3 Page 10 SPN166T06 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no …

  Dome, Enhancement, Channel, Mosfets, N channel enhancement mode mosfet

Basic Electronics

engineering.nyu.edu

• A metal oxide insulator is placed @ the gate to obtain a high input impedance @ the gate – gate input impedance approx. 1014Ω. • Use of insulator as described above yields a low gate-to-channel capacitance. – If too much static electricity builds up on the gate, then the MOSFET may be damaged.

  Oxide, Mosfets

Company Presentation - STMicroelectronics

www.st.com

Photovoltaic ICs •Rad-Hard products Analog, industrial & power conversion ICs 23 •Brushed DC motor drivers •Brushless DC motor drivers •Stepper motor drivers •MOSFET & IGBT gate drivers •Galvanic isolation ICs •GaN drives •Bluetooth® Low Energy ICs •Sub-1 GHz transceivers •Sigfox-compatible devices •LoRaWAN® technology

  Mosfets, Photovoltaic

Switch - ON Semiconductor

www.onsemi.com

by operating a bipolar transistor or MOSFET pass unit in its linear operating mode; that is, the drive to the pass unit is proportionally changed to maintain the required output voltage. Operating in this mode means that there is always a headroom voltage, Vdrop, between the input and the output. Consequently the regulator dissipates a

  Between, Transistor, Bipolar, Mosfets, Bipolar transistor

SMD-codes databook 2012 edition - Turuta

www.turuta.md

-MOSFETd MOSFET, depletion type-MOSFETe MOSFET , enhancement type-MESFET MEtal-Semiconductor FET n- n-channel junction transistor n/p- n-channel and p-channel transistors area ... pinout (section 12, 13). Column 7 (“Sch”) Sample schematic connection for some ICs. All drawings are placed in the section 16.

  Code, Edition, 2012, Enhancement, Depletion, Mosfets, Smd codes databook 2012 edition, Databook

2N7000 - Small Signal MOSFET

www.onsemi.com

Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) VGS VGSM ±20 ...

  Mosfets, Pmma, 2n7000

N-Channel Enhancement Mode MOSFET - Sync Power

www.syncpower.com

2017/1/10 Ver 2 Page 12 SPN70T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the

  Dome, Enhancement, Channel, Mosfets, N channel enhancement mode mosfet

BS108 - Small Signal MOSFET - redrok.com

www.redrok.com

bs108 http://onsemi.com 3 package dimensions to−92 (to−226) case 29−11 issue am style 30: pin 1. drain 2. gate 3. source notes: 1. dimensioning and tolerancing ...

  Small, Signal, Mosfets, Bs108 small signal mosfet, Bs108

30V Dual N-Channel MOSFET

www.aosmd.com

AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 I D (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E) 10

  Dual, Channel, Mosfets, 30v dual n channel mosfet

30V P-Channel MOSFET

www.aosmd.com

AON6407 30V P-Channel MOSFET General Description Product Summary VDS I D (at V GS = -10V) -85A R DS(ON) (at V GS = -10V) < 4.5m Ω R DS(ON) (at V GS = -6V) < 6.0m Ω 100% UIS Tested 100% R g Tested Symbol Drain-Source Voltage VDS-30 The AON6407 combines advanced trench MOSFET

  Channel, Mosfets, 30v p channel mosfet

BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps,

www.onsemi.com

BSS123LT1G, BVSS123LT1G www.onsemi.com 4 TYPICAL ELECTRICAL CHARACTERISTICS RDS(on) LIMIT 0.001 1 0.01 Figure 7. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) I

  Power, Mosfets, Pmma, Power mosfet 170 mamps

Ultra-Small High-Side N-Channel MOSFET Driver

ww1.microchip.com

MIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408)

  High, Drivers, Side, Channel, Mosfets, High side n channel mosfet driver

N-Channel 100-V (D-S) MOSFET - Vishay Intertechnology

www.vishay.com

Vishay Siliconix Si7322DN New Product Document Number: 69638 S-81549-Rev. B, 07-Jul-08 www.vishay.com 1 N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free Option Available TEFhcne †Tr ® Power MOSFET † 100 % UIS Tested

  Vishay, Channel, Mosfets, Vishay intertechnology, Intertechnology, Channel 100 v, Si7322dn

CM494 Datasheet - Sync Power

www.syncpower.com

2018/8/02 V.3 Page 8 SPN180T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the

  Datasheet, Channel, Mosfets

100V N-Channel MOSFET - Alpha and Omega Semiconductor

www.aosmd.com

AON7296 100V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 12.5A R DS(ON) (at V GS =10V) < 66m Ω R DS(ON) (at V GS =4.5V) < 90m Ω 100% UIS Tested 100% R g Tested Symbol The AON7296 uses trench MOSFET technology that is

  Channel, V001, Mosfets, 100v n channel mosfet

100V N-Channel MOSFET

www.aosmd.com

AOD2916 100V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 25A R DS(ON) (at V GS =10V) < 34m Ω R DS(ON) (at V GS =4.5V) < 43.5m Ω 100% UIS Tested 100% R g Tested Symbol The AOD2916 uses trench MOSFET technology that is

  Channel, V001, Mosfets, 100v n channel mosfet

General Description Product Summary

www.aosmd.com

AOD4184A 40V N-Channel MOSFET General Description Product Summary V DS I D (at V GS=10V) 50A R DS(ON) (at V GS=10V) < 7mΩ R DS(ON) (at V GS = 4.5V) < 9.5mΩ 100% UIS Tested 100% Rg Tested Symbol V DS V GS I DM I AS, I AR E AS, E AR

  General, Product, Descriptions, Summary, Mosfets, General description product summary, Mosfet general description product summary

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