Transcription of APPLICATION NOTE - MIT
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APPLICATION NOTE - MIT
APPLICATION NOTE1. GATE DRIVE REQUIREMENTS OF HIGH-SIDE DEVICESThe gate drive requirements for a power MOSFET or IGBT uti-lized as a high side switch (drain connected to the high voltagerail, as shown in Figure 1) driven in full enhancement, , lowestvoltage drop across its terminals, can be summarized as voltage must be 10-15V higher than thedrain voltage. Being a high side switch, suchgate voltage would have to be higher than therail voltage, which is frequently the highest volt-age available in the gate voltage must be controllable from thelogic, which is normally referenced to , the control signals have to be level-shiftedto the source of the high side power device,which, in most applications , swings between thetwo power absorbed by the gate drive circuitryshould not significantly affect the overall these constraints in mind, several
The output stage is implemented either with two N-Channel MOSFETs in totem pole configuration (source follower as a current sou rce and common source for current sinking), or with an N-Channel and a P-Channel CMOS inverter stage. Each MOSFET can sink or sourc e gate currents from 0.12 to 2A, depending on the MGD.
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