Chapter 2 Basic Structure of Computers - NCU

Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Chapter 2 Basic Structure of Computers

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Chapter 1 Introduction to CMOS Circuit Design

Chapter 1 Introduction to CMOS Circuit Design Jin-Fu Li Advanced Reliable Systems (ARES) Lab. Department of Electrical Engineering National Central University

  Design, Circuit, Cmos, Cmos circuit design

Training Course of Design Compiler [相容模式]

Training Course of Design Compiler REF: • CIC Training Manual – Logic Synthesis with Design Compiler, July, 2006 • TSMC 0 18um Process 1 8-Volt SAGE-XTM Stand Cell Library Databook September 2003

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Chapter 4 Low-Power VLSI DesignPower VLSI Design

Chapter 4 Low-Power VLSI DesignPower VLSI Design Jin-Fu Li Advanced Reliable Syy( )stems (ARES) Lab. Department of Electrical Engineering National Central UniversityNational Central University

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hspice tutorial.ppt [相容模式] - ee.ncu.edu.tw

Contents Introduction Simulation Input and Controls Waveform Instructions Simulation Output ARES Lab-2010 Hspice Tutorial 2

Chapter 6 VLSI Testing - NCU

Advanced Reliable Systems (ARE S) Lab. Jin-Fu Li, EE, NCU 8 Trends of Testing Two key factors are changing the way of VLSI ICs testing The manufacturing test cost has been not scaling

  Testing, Manufacturing, Vlsi, Vlsi testing

Chapter 4 Electrical Characteristics of CMOS

For on-chip metal wires The inductance produces Ldi/dt noise especially for ground bouncing noise. Note that when CMOS circuit are clocked, the current flow changes greatly Inductor) 4 ln(2 d h L ) 4 8 ln(2 h w w h L dt di V L d h h w

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Chapter 9 Asynchronous Sequential Logic

Design Procedure 1. Obtain a primitive flow table from the given design specifications 2. Reduce the flow table by merging rows in the primitive flow table 3. Assign binary state variables to each row of the reduced flow to obtain the transition table 4. Assign output values to the dashes associated with the unstable states to obtain the output ...

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Chapter 2 MOS Transistor Theory - NCU

MOS transistors conduct electrical current by using ... ds than expected at high V ds Mobility degradation At high vertical field strengths (V gs/t ox), ... the electron speed will be high enough to break the electron-hole pair. Moreover, the electrons …

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DC/DCコンバータ設計セミナー - ROHM

• pch/nch mosfetはさらに低ドロップ アウトを目指したもの ＋ － v in v o v ref r 2 r 1 （=v ref） 制御トランジスタ ドロップアウト電 npn標準型 3v前後 npn ldo 1v～2v pnp ldo 0.5v以下 …

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