P Channel 60 V D S Mosfet
Found 9 free book(s)LTC4441/LTC4441-1 - N-Channel MOSFET Gate Driver
www.analog.comLTC4441/LTC4441-1 1 44411fa Typical applicaTion FeaTures DescripTion N-Channel MOSFET Gate Driver The LTC®4441/LTC4441-1 is an N-channel MOSFET gate driver that can supply up to 6A of peak output current.
NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK
www.onsemi.comNTD2955/D NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK-60 V, -12 A This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge
P-Channel 40 V (D-S) MOSFET - Vishay Intertechnology
www.vishay.comP-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition TEFhcne †Tr ® Power MOSFET † 100 % Rg Tested † Compliant to RoHS Directive 2002/95/EC APPLICATIONS † Load Switch † DC/DC Converter Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.
FQP30N06L 60V LOGIC N-Channel MOSFET - SparkFun …
cdn.sparkfun.com60V LOGIC N-Channel MOSFET General Description ... VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 32 A - Continuous ... 7.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 79 W - Derate above 25°C 0.53 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL
MOS TRANSISTOR REVIEW - Stanford University
web.stanford.eduec ≈ 5 × 104 V/cm for holes, hence velocity saturation for P-channel MOSFET will not become important until L < 0.25 µm. Figure. Effects of velocity saturation on the MOSFET I-V characteristics. (a)Experimental characteristics of a MOSFET with L = 2.7 µm, x0 =0.05 µm,
P-Channel 80-V (D-S) MOSFET - Vishay Intertechnology
www.vishay.comP-Channel 80-V (D-S) MOSFET ... 60 80 100 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) www.vishay.com 6 Document Number: 73438 S09-0271-Rev. C, 16-Feb-09 Vishay Siliconix Si7469DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at ...
NX7002AK - Nexperia
assets.nexperia.com60 V, single N-channel Trench MOSFET All information provided in this document is subject to legal disclaimers. Product data sheet 6 August 2015 2 / 16 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 S source 3 D drain 1 2 3 TO-236AB (SOT23) 017aaa255 G D S 6. Ordering ...
MOSFET transistor I-V characteristics
course.ece.cmu.eduLecture 20-8 PMOSFETs • All of the voltages are negative • Carrier mobility is about half of what it is for n channels p+ n S G D B p+ • The bulk is now connected to the most positive potential in the circuit • Strong inversion occurs when the channel becomes as p-type as it was n-type • The inversion layer is a positive charge that is sourced by the larger potential
NDS7002A - N-Channel Enhancement Mode Field Effect …
www.onsemi.com2N7000, 2N7002, NDS7002A www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value 2N7000 2N7002 NDS7002A Unit VDSS Drain−to−Source Voltage 60 V VDGR Drain−Gate Voltage (RGS ≤ 1 MW) 60 V VGSS Gate−Source Voltage − Continuous ±20 V Gate−Source Voltage − Non Repetitive (tp < 50 ms) …