PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET

20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet Symbol Parameter Conditions Min Typ Max Unit ... (j-sp) thermal resistance from junction to solder point--115K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 250 K/W.

N-channel 60 V, 4.6 mΩ - Nexperia

1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

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AEC-Q101 qualified • 1 kV ESD protected 3. Applications ...

PMV130ENEA 40 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description ... • 1 kV ESD protected • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver ... Fig. 15.Gate charge waveform definitions aaa-011953 VSD (V) 0 0.4 0.8 1.2 2 1 3 4 IS (A) 0 Tj = 150 °C

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PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench …

PMDT290UCE All information provided in this document is subject to legal disclaimers. 2 J 0 8;*+ Product data sheet Rev. 1 — 6 October 2011 2 of 20

74HC541; 74HCT541 Octal buffer/line driver; 3-state

1. General description The 74HC541; 74HCT541 is an octal non-inverting buffer/line driver with 3-state outputs. The device features two output enables (OE1 and OE2).

  Drivers, Line, Buffer, Lacto, Octal buffer line driver, Buffer line driver

MMBT3904 NPN switching transistor - Nexperia

DATA SHEET Product data sheet Supersedes data of 2002 Oct 04 2004 Feb 03 DISCRETE SEMICONDUCTORS MMBT3904 NPN switching transistor …

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BZT52H series Single Zener diodes in a SOD123F …

1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package.

  Diode, Zener, Zener diodes in a sod123f, Sod123f

PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor ...

1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  Surfaces, Transistor, Resistor, Equipped, Resistor equipped transistor

74HC4017; 74HCT4017 Johnson decade counter with 10 …

The 74HC4017; 74HCT4017 is a 5-stage Johnson decade counter with 10 decoded outputs (Q0 to Q9), an output from the most significant flip-flop (Q5-9), two clock inputs (CP0 and CP1) and an overriding asynchronous master reset input (MR).

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PSSI2021SAY Constant current source in SOT353 package

LED driver Figure 5 shows a typical application circuit for an LED driver. The constant current ensures a constant LED brightness. Switching the current ON/OFF The output can be switched ON and OFF by connecting a resistor-equipped transistor (RET, e.g. PDTC124XU) as shown in Figure 6.

  Constant, Drivers, Current, Led driver, Constant current, Constant led

LTC4441/LTC4441-1 - N-Channel MOSFET Gate Driver

LTC4441/LTC4441-1 1 44411fa Typical applicaTion FeaTures DescripTion N-Channel MOSFET Gate Driver The LTC®4441/LTC4441-1 is an N-channel MOSFET gate driver that can supply up to 6A of peak output current.

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NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK

NTD2955/D NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK-60 V, -12 A This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge

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P-Channel 40 V (D-S) MOSFET - Vishay Intertechnology

P-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition TEFhcne †Tr ® Power MOSFET † 100 % Rg Tested † Compliant to RoHS Directive 2002/95/EC APPLICATIONS † Load Switch † DC/DC Converter Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.

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FQP30N06L 60V LOGIC N-Channel MOSFET - SparkFun …

60V LOGIC N-Channel MOSFET General Description ... VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 32 A - Continuous ... 7.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 79 W - Derate above 25°C 0.53 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL

  Channel, Mosfets, Channel mosfet, 60 v

MOS TRANSISTOR REVIEW - Stanford University

ec ≈ 5 × 104 V/cm for holes, hence velocity saturation for P-channel MOSFET will not become important until L < 0.25 µm. Figure. Effects of velocity saturation on the MOSFET I-V characteristics. (a)Experimental characteristics of a MOSFET with L = 2.7 µm, x0 =0.05 µm,

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P-Channel 80-V (D-S) MOSFET - Vishay Intertechnology

P-Channel 80-V (D-S) MOSFET ... 60 80 100 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) www.vishay.com 6 Document Number: 73438 S09-0271-Rev. C, 16-Feb-09 Vishay Siliconix Si7469DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at ...

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MOSFET transistor I-V characteristics

Lecture 20-8 PMOSFETs • All of the voltages are negative • Carrier mobility is about half of what it is for n channels p+ n S G D B p+ • The bulk is now connected to the most positive potential in the circuit • Strong inversion occurs when the channel becomes as p-type as it was n-type • The inversion layer is a positive charge that is sourced by the larger potential

  Transistor, Characteristics, Channel, Mosfets, Mosfet transistor i v characteristics

NDS7002A - N-Channel Enhancement Mode Field Effect …

2N7000, 2N7002, NDS7002A www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value 2N7000 2N7002 NDS7002A Unit VDSS Drain−to−Source Voltage 60 V VDGR Drain−Gate Voltage (RGS ≤ 1 MW) 60 V VGSS Gate−Source Voltage − Continuous ±20 V Gate−Source Voltage − Non Repetitive (tp < 50 ms) …

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