Search results with tag "Ixys"
Think Fast Fast. Reliable. Energy-Efficient. IXYS Q3 …
ixapps.ixys.comwww.ixyspower.com EUROPE IXYS GmbH marcom@ixys.de USA IXYS Power sales@ixys.com ASIA IXYS Taiwan/IXYS Korea sales@ixys.com.tw Part Number IXFH70N20Q3 IXFT50N30Q3
Lead Free Solder Reflow - IXYS CORPORATION
www.ixys.com1 IXYS Corporation - www.ixys.com 3540 Bassett Street; Santa Clara, CA 95054; Tel: (408) 982-0700; Fax: (408) 496-0670 © 2006 IXYS All rights reserved
Applications and uses Power Capacitors - IXYS UK …
www.westcode.com1 www.ixysuk.com www.ixys.com Selector Guide Power Capacitors IUK-TSM-2014-010 Applications and uses Filters GTO and IGBT snubbers Smoothing
CoolMOS™ 1) Power MOSFET - IXYS Corporation: …
ixapps.ixys.com© 2009 IXYS All rights reserved 2 - 4 20090209d IXKH 70N60C5 IXYS reserves the right to change limits, test conditions and dimensions. Source-Drain Diode
3-Phase Power Factor Correction, Using ... - IXYS Corporation
www.ixys.com3-Phase Power Factor Correction, Using Vienna Rectifier Approach and Modular ... IXYS Corp., Santa Clara, CA IXYS Corp., Santa Clara, CA Physical Research Laboratory, ... three level PWM rectifier, utilizing three MOSFETS, with controlled output Voltage; three wire input, not requiring any connection to Neutral. 2. It is a dual boost type PFC ...
TM IXYK120N120C3 V = 1200V TM ... - IXYS …
ixapps.ixys.comIXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYK120N120C3 IXYX120N120C3 IXYS REF: IXY_120N120C3(9P-C91) 9-09-13 Fig. 19.
IXOLARTM High Efficiency SolarMD - IXYS …
ixapps.ixys.comIXYS reserves the right to change limits, test conditions and dimensions © 2010 IXYS All rights reserved
Energy-Efficient High-Power IGBTs - IXYS Corporation
www.ixyspower.comEnergy-Efficient High-Power IGBTs (From 600V to 4500V) IXYS Corporation (NASDAQ: IXYS) offers the broadest IGBTs product portfolios in the power semiconductor industry; designers can
Clare Inc., Officially Becomes IXYS Integrated Circuits ...
www.ixys.comPRESS RELEASE Clare Inc., Officially Becomes IXYS Integrated Circuits Division In a move to streamline corporate identity and improve customer response, Clare Inc.
Power MOSFET Basics - IXYS CORPORATION
www.ixys.comIXAN0061 1 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a
Depletion-Mode Power MOSFETs and ... - IXYS …
www.ixys.comDepletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high
Depletion-Mode Power MOSFETs and ... - IXYS Corporation
www.ixys.comDepletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero (V GS =0V).
PolarP3 - 2011-05-12 - Rev 1a Celsius - IXYS CORPORATION
www.ixys.comPower switching capabilities and device ruggedness of these devices is further enhanced through the utilization of IXYS’ HiPerFETTM process, yielding a device with a fast intrinsic diode for low reverse recovery charge (Qrr) and improved turn-off dV/dt immunity.
Current Stock - IXYS UK Westcode
www.ixysuk.comPart Number Description Qty 28 October 2018 Current Stock Please check availability with Customer Service prior to placing any orders. IXYS UK Westcode Ltd
Preliminary Technical Information - IXYS Corporation
ixapps.ixys.comIXFN62N80Q3 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g
www.ixys
www.ixys.comIXYS reserves the right to change limits, test conditions and dimensions 3 General Informations for Chips When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip
Power MOSFET Basics - IXYS Corporation
www.ixys.comPower MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors (BJTs) and
Insulated Gate Bipolar Transistor (IGBT) Basics
www.ixys.comInsulated Gate Bipolar Transistor (IGBT) Basics Abdus Sattar, IXYS Corporation 3 IXAN0063 Figure 2: Equivalent circuit model of an IGBT [2] Based on the structure, a simple equivalent circuit model of an IGBT can be drawn as
Soft Recovery Diode Type M0139S/R ... - IXYS UK Westcode Ltd
www.westcode.comSoft Recovery Diode Types M0139S/R#120 to M0139S/R#180 Data Sheet. Types M0139S/R#120 to M0139S/R#180 Issue 2 Page 3 of 11 September 2016 Notes on Ratings and Characteristics
New IXYS Silicon Carbide solutions in MiniBLOC package
www.ixyspower.comSilicon Carbide solutions like MCB40P1200LB (SiC phase leg) or DCG20B1200LB (SiC recti-fier full bridge) or “Hybrid” solutions of fast Mosfets and Silicon Carbide diodes like MKH17RP650DCGLB (double boost PFC) can be used and gives the designer the choice to select the right product in terms of efficiency and price.
Common Cathode DSEK 60 I = 2x 26 A Fast …
ixapps.ixys.com© 2000 IXYS All rights reserved 1 - 2 V RSM V RRM Type V V 1200 1200 DSEK 60-12A Symbol Test Conditions Maximum Ratings I FRMS T VJ = T VJM 50 A I FAVM …
MMA-005022 v3 - Microwave Technology
www.mwtinc.comMMA-005022B 30KHz-50GHz Traveling Wave Amplifier MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice.
HiPerRFTM IXFH6N100F VDSS Power MOSFETs ... - …
ixapps.ixys.comIXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFH6N100F IXFT6N100F Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
WESTCODE
www.westcode.comWESTCODE An IXYS Company Rectifier Diode Types W0642WC160 to W0642WC240 Data Sheet. Types W0642WC160 to W0642WC240 Issue 1 Page 5 of 9 September, 2004 5.3 D.C. Thermal Impedance Calculation ∑ = = − = ⋅− p n p
リニア・パワーMOSFETの基礎とアプリケーション Abdus …
www.j-rep.comIXYS代理店 ジェイレップ株式会社 本社 〒564-0051 大阪府吹田市豊津町2-1 Tel:06-6368-2111 Fax:06-6368-2114 e-mail:info@j-rep.com
Driving your MOSFET or IGBT wild to ... - IXYS …
www.ixys.comDriving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and …
XPT IGBT Module V= V CES I= A C25 - IXYS …
ixapps.ixys.comMIXA450PF1200TSF Phase leg + free wheeling Diodes + NTC XPT IGBT Module 5 6 4 2 1 8 7 10/11 3 9 Part number MIXA450PF1200TSF Backside: isolated C25 VV CE(sat) 1.8
IXYS Announces Acquisition of Zilog
www.ixys.comPRESS RELEASE. IXYS Announces Acquisition of Zilog . Biel, Switzerland and San Jose, CA. December 7, 2009 — IXYS Corporation (NASDAQ: IXYS), a market leader in power semiconductors and specialized mixed signal IC products,
IXYS IXAN0010 - IXYS Corporation
www.ixys.comIXYS Semiconductor GmbH; Edisonstr. 15; D-68623; Lampertheim, Germany; Tel: +49-6206-503-0; Fax: +49-6206-503627 2 1. INTRODUCTION Modern Power Electronics makes generous use of MOS-FETs and IGBTs in most applications and, if the present trend is any indication, the future will see more and more applications making use of MOSFETs and IGBTs.
IXYS POWER MOSFETs Datasheet Definition
www.ixys.comIXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 2 The power dissipation is the maximum calculated power that the device can
IXYS P-channel MOFETs Applications
www.ixys.comIXYS P-channel Power MOSFETs and Applications Abdus Sattar, Kyoung-Wook Seok, IXAN0064 3 IXYS Corporation, 1590 Buckeye Drive, Milpitas, CA 95035, Phone: 408-457- 9000, October, 2008.
IXYS Power MOSFETs, Modules, and Gate Drivers
www.ixyspower.comMarch 2014 www.ixys.com FEATURES ‘Normally-On’ operation Linear mode tolerant Low R DS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified
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