Search results with tag "Power dissipation"
IXYS POWER MOSFETs Datasheet Definition
www.ixys.comIXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 2 The power dissipation is the maximum calculated power that the device can
Calculating Motor Driver Power Dissipation - TI.com
www.ti.comSources of Power Dissipation in a Motor Driver www.ti.com As an approximation, switching losses for each output are calculated as follows: PSW = PSW_RISE + PSW_FALL where PSW is the total switching loss (in watts) for one output, and PSW_RISE is the power dissipated during the rising edge, and PSW_FALL is dissipated during the falling edge. Expanding on this:
LM1875 20W Audio Power Amplifier datasheet (Rev. A)
www.ti.comterm power dissipation is usually not limited in monolithic audio power amplifiers, and this can be a problem when driving reactive loads, which may draw large currents while high voltages appear on the output transistors. The LM1875 not only limits current to around 4A, but also reduces the value of the limit current when an output
Electrical Calculations
www.lmphotonics.comcurrent for 3000 seconds. The power dissipation is based on an RMS current of sqrt(600x600x30 + 100x100x3000 + 0 x 3000)/sqrt(30 + 3000 + 3000) = 82.25 Amps. To calculate the Power Dissipation of a busbar, enter in the width, length and thickness of the bar, and the RMS Current passing through it. Select the units as either metric or imperial.
SLFS022I –SEPTEMBER 1973–REVISED SEPTEMBER 2014 xx555 ...
www.ti.comThe maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) - TA) / θJA. Operating at the absolute maximum TJ of 150°C can affect reliability. (4) The package thermal impedance is calculated in accordance with JESD 51-7. (5) Maximum power dissipation is a function of TJ(max), θJC, and TC. The maximum ...
TL431 - Programmable Precision References
www.onsemi.comTotal Power Dissipation @ TA = 25°C PD W Derate above 25°C Ambient Temperature D, LP Suffix Plastic Package 0.70 P Suffix Plastic Package 1.10 DM Suffix Plastic Package 0.52 Total Power Dissipation @ TC = 25°C PD W Derate above 25°C Case Temperature D, LP Suffix Plastic Package 1.5 P Suffix Plastic Package 3.0 ESD Rating (Note 1)
30V N-Channel MOSFET
www.aosmd.comB. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles ...
Precision CMOS Analog Switches
www.vishay.comPrecision CMOS Analog Switches FEATURES • ± 15 V analog signal range ... switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical ... Power Dissipation (Package)b 8-Pin Plastic MiniDIPc 400 8-Pin Narrow SOICd 400 mW
LP2950 - Voltage Regulator - Low Power Low, Dropout
www.onsemi.comLP2950Cx−xx / LP2951Cxx−xx 1% Output Voltage Precision at TA = 25°C LP2950ACx−xx / LP2951ACxx−xx 0.5% Output Voltage Precision at TA = 25°C From ... Maximum Power Dissipation P D Internally Limited W Case 751(SOIC −8) D Suffix ... − Inputs High: passing positive current 100 mA and negative current −10 mA. ...
MT-043: Op Amp Power Supply Rejection Ratio …
www.analog.comMT-043 calculated knowing conditions. Details of further considerations relating to power dissipation, heatsinking, etc., can be found in Chapter 7 of Reference 1.
RS1M - Fast Rectifiers
www.onsemi.comPD Power Dissipation 1.19 W R JA Junction−to−Ambient Thermal Resistance (Note 1) 105 °C/W R JL Junction−to−Lead Thermal Resistance (Note 1) 32 °C/W 1. Device mounted on FR−4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Value RS1A RS1B RS1D RS1G RS1J RS1K ...
Axial-Lead Glass Passivated Standard
www.onsemi.com60 Hz resistive or inductive loads. For capacitive load, derate current by 20%. 1N5400 thru 1N5408 ... Forward Power Dissipation 3456 7 8 910 16 14 12 10 8 6 4 2 0 IF(AV), AVERAGE FORWARD CURRENT (A) P F(AV) ... ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty ...
DFLS1100 - Diodes Incorporated
www.diodes.comHalogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and ... half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V ... Fig. 1 Forward Power Dissipation F ...
LT1057/LT1058 - Dual and Quad, JFET Input Precision High ...
www.analog.comreplace four single precision JFET input op amps, while saving board space, power dissipation and cost. Both the LT1057 and LT1058 are available in the plastic PDIP package and the surface mount SO package. Current Output, High Speed, High Input Impedance Instrumentation Amplifier n 14V/µs Slew Rate: 10V/µs Min n 5MHz Gain-Bandwidth Product
30V N-Channel MOSFET
aosmd.comB. The power dissipation P D is based on T J(MAX) =150 °C, using ≤10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initialT J=25 °C. D.