AN1040/D Mounting Considerations For Power …

Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 3 1 Publication Order Number: AN1040/D AN1040/D Mounting Considerations For Power Semiconductors

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Corporate Fact Sheet - ON Semiconductor

Company Profile ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based

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AND8231 - Circuit Configuration Options for TVS …

AND8231/D www.onsemi.com 2 Avalanche TVS Diodes Avalanche diodes are a good TVS device for applications that require power line surge immunity and ESD protection.

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LP2950 - 100 mA, Low Power Low Dropout Voltage …

LP2950, LP2951, NCV2951 www.onsemi.com Dropout Voltage V 0 in LP2950/LP2951 BIAS CURRENT (mA) I = 25°C V

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BCP56T1 - NPN Silicon Epitaxial Transistor

© Semiconductor Components Industries, LLC, 2016 March, 2018 − Rev. 14 1 Publication Order Number: BCP56T1/D BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in

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BCP53 Series PNP Silicon Epitaxial Transistors

BCP53 Series www.onsemi.com 3 TYPICAL CHARACTERISTICS Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. DC Current Gain vs. Collector

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AND8299 - EMC Tests and PCB Guidelines for …

AND8299 - EMC Tests and PCB Guidelines for Automotive Linear Regulators

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BSS138 N-Channel Logic Level Enhancement Mode …

2005 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: BSS138/D BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor

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TND310 ON Semiconductor Device Nomenclature

This document contains the device nomenclature breakdown (also referred to as the part number decoder, product naming convention, or part naming convention) for …

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2018 PHILIPPINES BENEFITS SUMMARY - ON …

2018 PHILIPPINES BENEFITS SUMMARY Employees are eligible for most benefits program on the first day of employment. Holidays: Ten (10) paid national regular holidays and Eight (8) national special holidays per year as provided

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High Stability Thin Film Flat Chip Resistors

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ... MAXIMUM RESISTANCE CHANGE AT RATED DISSIPATION OPERATION MODE STANDARD POWER Rated dissipation, P70 TNPW0201 e3 0.050 W 0.075 W TNPW0402 e3 0.063 W 0.100 W ... fine trimming the resistive layer without damaging the ceramics. A further conditioning is applied in …

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DFLS1100 - Diodes Incorporated

Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and ... half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V ... Fig. 1 Forward Power Dissipation F ...

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Axial-Lead Glass Passivated Standard

60 Hz resistive or inductive loads. For capacitive load, derate current by 20%. 1N5400 thru 1N5408 ... Forward Power Dissipation 3456 7 8 910 16 14 12 10 8 6 4 2 0 IF(AV), AVERAGE FORWARD CURRENT (A) P F(AV) ... ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty ...

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LM1875 20W Audio Power Amplifier datasheet (Rev. A)

A power amplifier's output transistors can be damaged by excessive applied voltage, current flow, or power dissipation. The voltage applied to the amplifier is limited by the design of the external power supply, while the maximum current passed by the output devices is usually limited by internal circuitry to some fixed value. Short-

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Electrical Calculations

current for 3000 seconds. The power dissipation is based on an RMS current of sqrt(600x600x30 + 100x100x3000 + 0 x 3000)/sqrt(30 + 3000 + 3000) = 82.25 Amps. To calculate the Power Dissipation of a busbar, enter in the width, length and thickness of the bar, and the RMS Current passing through it. Select the units as either metric or imperial.

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30V N-Channel MOSFET

B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles ...

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30V N-Channel MOSFET

B. The power dissipation P D is based on T J(MAX) =150 °C, using ≤10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initialT J=25 °C. D.

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3310 9 mm Square Sealed Panel Control - Bourns, Inc.

3310 – 9 mm Square Sealed Panel Control Features n Conductive plastic n PC board and bushing mount n Plastic or metal bushing and plastic shaft n Withstands typical industrial washing processes n Compact package saves board and panel space Electrical Characteristics1 Standard Resistance Range - Linear 1 K ohms to 1 megohm