Transcription of TM IXYK120N120C3 V = 1200V TM ... - IXYS …
{{id}} {{{paragraph}}}
Example: bankruptcy
TM IXYK120N120C3 V = 1200V TM ... - IXYS …
2013 ixys CORPORATION, All Rights ReservedIXYK120N120C3 IXYX120N120C3 VCES= 1200 VIC110= 120 AVCE(sat) (typ)= 96nsDS100451B(9/13)High-Speed IGBT sfor 20-50 kHz SwitchingFeatures Optimized for Low Switching Losses Square RBSOA International Standard Packages Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling CapabilityAdvantages High Power Density Low Gate Drive RequirementApplications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp BallastsSymbolTest Conditions Characteristic Values(TJ = 25 C, Unless Otherwise Specified) Min. Typ. IC = 250 A, VGE = 0V 1200 VVGE(th)IC= 500 A, VCE = VGE VCES, VGE = 0V 25 A TJ = 150 C mAIGESVCE= 0V, VGE = 20V 100 nAVCE(sat)IC= IC110, VGE = 15V, Note 1 V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYK120N120C3 IXYX120N120C3 IXYS REF: IXY_120N120C3(9P-C91) 9-09-13 Fig. 19.
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: