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www.ixys
1 ixys reserves the right to change limits, test conditions and dimensionsContentsPageSymbols and Definitions2 Nomenclature2 general Informations for Chips3 Assembly Instructions4 FRED, Rectifier Diode and Thyristor Chips in Planar Design5 IGBT ChipsVCESICG-Series, Low VCE(sat) B2 Types600 ..1200 V7 .. 20 A6G-Series, Fast C2 Types600 V7 .. 20 A6S-Series, SCSOA Capability, Fast Types600 V10 .. 20 A6E-Series, Improved NPT technology1200 .. 1700 V20 .. 150 A7 MOSFET ChipsVDSSRDS(on)HiPerFETTM Power MOSFET70 ..1200 .. 8-10 PolarHT/HVTM Power MOSFET55 .. 600 .. 11 PolarHT/HVTM HiPerFET Power MOSFET100 .. 600 .. 12-14N-Channel Depletion Mode MOSFET500 ..1000 V30 .. 110 15P-Channel Power MOSFET-100 ..-600 .. 15 Chip outlines16-23 Bipolar ChipsVRRM / VDRMIF(AV)M / IT(AV)MRectifier Diodes800 .. 2200 V12 .. 788 A24-25 FREDs200.
IXYS reserves the right to change limits, test conditions and dimensions 3 General Informations for Chips When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip
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