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1IXYS reserves the right to change limits, test conditions and dimensionsContentsPageSymbols and Definitions2Nomenclature2General Informations for Chips3Assembly Instructions4FRED, Rectifier Diode and Thyristor Chips in Planar Design5IGBT ChipsVCESICG-Series, Low VCE(sat) B2 Types600 ...1200 V7 ... 20 A6G-Series, Fast C2 Types600 V7 ... 20 A6S-Series, SCSOA Capability, Fast Types600 V10 ... 20 A6E-Series, Improved NPT technology1200 ... 1700 V20 ... 150 A7MOSFET ChipsVDSSRDS(on)HiPerFETTM Power MOSFET70 ...1200 ... 8-10PolarHT/HVTM Power MOSFET55 ... 600 ... 11PolarHT/HVTM HiPerFET Power MOSFET100 ... 600 ... 12-14N-Channel Depletion Mode MOSFET500 ...1000 V30 ... 110 15P-Channel Power MOSFET-100 ...-600 ... 15Chip outlines16-23Bipolar ChipsVRRM / VDRMIF(AV)M / IT(AV)MRectifier Diodes800 ... 2200 V12.
IXYS reserves the right to change limits, test conditions and dimensions 3 General Informations for Chips When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip
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