Transcription of HiPerRFTM IXFH6N100F VDSS Power MOSFETs ... - …
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HiPerRFTM IXFH6N100F VDSS Power MOSFETs ... - …
2001 ixys CORPORATION, All Rights ReservedDS98732A(08/01)HiPerRFTMP ower MOSFETsF-Class: MegaHertz SwitchingFeatureszRF capable MOSFETszDouble metal process for low gate resistancezRugged polysilicon gate cell structurezUnclamped Inductive Switching (UIS)ratedzLow package inductance- easy to drive and to protectzFast intrinsic rectifierApplicationszDC-DC converterszSwitched-mode and resonant-modepower supplies, >500kHz switchingzDC MHz industrial applicationszPulse generationzLaser driversz RF amplifiersAdvantageszSpace savingszHigh Power densityVDSS= 1000 VID25= 6 ARDS(on) trr 250nsN-Channel Enhancement ModeAvalanche Rated, Low Qg, LowIntrinsic Rg, High dV/dt, Low trrIXFH6N100 FIXFT6N100 FSymbolTest ConditionsMaximum RatingsVDSSTJ= 25 C to 150 C1000 VVDGRTJ= 25 C to 150 C, RGS = 1M 1000 VVGSSC ontinuous 20 VVGSMT ransient 30 VID25TC= 25 C6 AIDMTC= 25 C, Pulse Width Limited by TJM24 AIARTC= 25 C6 AEASTC= 25 C700 mJdV/dtIS IDM, di/dt < 100A/ s, VDD VDSS 5 V/ns TJ 150 C, RG = 2 PDTC= 25 C180 WTJ-55.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFH6N100F IXFT6N100F Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
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