Transcription of Power MOSFET Basics Understanding Superjunction …
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Power MOSFET Basics Understanding Superjunction …
VISHAY SILICONIXMOSFETsDevice Application Note AN849 Power MOSFET Basics Understanding Superjunction Revision: 21-Apr-151 Document Number: 66864 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT NOTEby Sanjay Havanur and Philip ZukPower mosfets based on Superjunction technology have become the industry norm in high-voltage switching converters. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient switching at any given frequency. Prior to the availability of Superjunction mosfets the dominant design platform for high-voltage devices was based on planar technology.
600 V rated MOSFETs, more than 95 % of the resistance comes from the epitaxial layer. It is obvious that for any significant reduction in the RDS(on) value, it is necessary to find a way of heavily doping the drift region and drastically reducing the epi resistance. N - Epi N + N + Substrate P + Body Oxide Oxide Gate Source and Body Source and ...
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