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A precision CMOS bandgap reference - web.mit.edu

1014 IEEEJOURNALOFSOLID-STATECIRCUITS, , , , ,threep-tubresistors,andoneop-amparenece ssarytoproduceareferencewithfixedvoltage of than2percent,whilekeepingthermaldriftbel ow40ppm/ ~ Cto125 ,atmodestcostincircuitcomplexity, ,thevoltagereferenceisoftenapotentiallym osttroublesomecomponentsinceitmustproduc eatemperaturestable,processinvariant, , ;however,theabsolutemagnitudeofoutputisp oorlycontrolledbecauseitdependsontheaccu racyofdepletionandenhancementimplants[1] .Inthebandgapreferences,wheretheoutputis derivedfromthevoltagedifferenceoftwodiod esforwardbiasedbyratioedcur-rents,bothth ethermaldriftandtheabsolutevalueoftheout putcanbecontrolledwithprecision[2] [4].ACIVfOSbandgapvoltagereferencewhichu sesbipolar-likesource-to-draintransferch aracteristicsofMOStran-sistorinweakinver sionwasreported[5],[6]. [7] , ,1983;revisedJuly13, ,MurrayHI1l, ,Honeywell, [8]usestemperaturedependentp-tubresistor stoprovidebiascurrentstothereferencediod es,whicharetheemitter-basejunctionsofthe bipolartran-sistorsformedbythen+ ,thebasiccircuitandthecriteriafortempera turecompensa-tionarepresented, , , , (7 )andacrossdiode2isV2(T),thentheoutputcan beexpressedasvout=A(vl(T)-v2(T))+B(v2(T) )=avl(T) bv2(T)(1) [4].

1014 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. SC-19, NO. 6, DECEMBER 1984 A Precision CMOS Bandgap Reference ... both the thermal drift and the absolute value of the

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