Transcription of AN-32 FET Circuit Applications
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LM101,LM103AN-32 FET Circuit ApplicationsLiterature Number: SNOA620TL/H/6791 FET Circuit ApplicationsAN-32 National SemiconductorApplication Note 32 February 1970 FET Circuit Applications *Polycarbonate dielectricTL/H/6791 1 Sample and Hold With Offset AdjustmentThe 2N4339 jfet was selected because of its low lGSS(k100 pA), very-low lD(OFF)(k50 pA) and low pinchoff volt-age. Leakages of this level put the burden of Circuit perform-ance on clean, solder-resin free, low leakage Circuit 2TL/H/6791 3 Long Time ComparatorThe 2N4393 is operated as a Miller integrator. The high Yfsof the 2N4393 (over 12,000mmhos@5 mA) yields a stagegain of about 60. Since the equivalent capacitance lookinginto the gate is C times gain and the gate source resistancecan be as high as 10 MX, time constants as long as aminute can be AC Coupled IntegratorThis Circuit utilizes the m-amp technique to achieve veryhigh voltage gain.
TL/H/6791–16 Level-Shifting-Isolation Amplifier The 2N4341 JFET is used as a level shifter between two op amps operated at different power supply voltages.
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FET Constant-Current Source/Limiter, JFET, Biasing, ENHANCED-JFET LOW-OFFSET, Enhanced-jfet low-offset operational amplifiers, 11EDCField-effect transistorUnivMalasiya, Junction Field Effect Transistor Theory, Junction Field Effect Transistor Theory and Applications, Alphasense Application Note AAN 105, To the Published Amplifier Circuits, ELECTRONICS AND COMMUNICATION, ELECTRONICS AND COMMUNICATION ENGINEERING UNIT, Application of Microwave GaAs FETs