Transcription of AO3400 Rev8 RoHS
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AO3400 Rev8 RoHS
AO340030V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 28m RDS(ON) (at VGS = )< 33m RDS(ON) (at VGS = )< 52m SymbolVDSThe AO3400 combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is suitable for use as aload switch or in PWM Maximum Ratings TA=25 C unless otherwise noted30 VDrain-Source Voltage30G DSSOT23 Top View Bottom View DGSGSDVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient CTA=70 CPulsed Drain Current CContinuous DrainCurrentVV 12 Gate-Source VoltageDrain-Source Voltage30 ParameterTypMax C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsPower Dissipation BPDTA=25 CWG DSSOT23 Top View Bottom View DGSGSD Rev 8.
AO3400 Symbol Min Typ Max Units BV DSS 30 V VDS =30V, V GS =0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 0.65 1.05 1.45 V ID(ON) 30 A 18 28 TJ=125°C 28 39 19 33 mΩ 24 52 mΩ gFS 33 S VSD 0.7 1 V IS 2 A Ciss 630 pF Coss 75 pF Crss 50 pF Rg 1.5 3 4.5 Ω Qg 6 7 nC Qgs 1.3 nC Qgd 1.8 nC tD(on) 3 ns t 2.5 ns Reverse Transfer Capacitance VGS =0V, V DS =15V, f=1MHz …
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