Transcription of AO3400 Rev8 RoHS
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AO3400 Rev8 RoHS
AO340030V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 28m RDS(ON) (at VGS = )< 33m RDS(ON) (at VGS = )< 52m SymbolVDSThe AO3400 combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is suitable for use as aload switch or in PWM Maximum Ratings TA=25 C unless otherwise noted30 VDrain-Source Voltage30G DSSOT23 Top View Bottom View DGSGSDVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient CTA=70 CPulsed Drain Current CContinuous DrainCurrentVV 12 Gate-Source VoltageDrain-Source Voltage30 ParameterTypMax C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsPower Dissipation BPDTA=25 CWG DSSOT23 Top View Bottom View DGSGSD Rev 8.
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 °C, using ≤10s junction-to-ambient thermal resistance.
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