Transcription of BC107/BC108 Series - Farnell
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BC107/BC108 Series - Farnell
BC107/BC108 SeriesLow Power bipolar TransistorsPage 120/04/06 : NPN Silicon Planar Epitaxial Metal Can Dimensions : MillimetresPin Configuration:1. Emitter2. Base3. CollectorGeneral Purpose Amplifier/SwitchesBC107/BC108 SeriesLow Power bipolar TransistorsPage 220/04/06 Maximum RatingsDescriptionSymbolBC107BC108 UnitCollector-Emitter VoltageVCEO4525 VCollector-Base VoltageVCBO5030 Emitter-Base Current Dissipation at Ta= 25 CDerate above 25 CPower Dissipation at TC = 25 CDerate above 25 and Storage Junction Temperature RangeTJ, Tstg-65 to +200 CThermal ResistanceJunction to CaseRth (j-c)175 C/WElectrical Characteristics (Ta = 25 C unless otherwise specified)DescriptionSymbolTest ConditionMinimumMaximumUnit Collector-Emitter VoltageVCEOIC = 2mA, IB = 0BC107BC1084525-VEmitter-Base VoltageVEBOIE = 10 A, IC= off CurrentICBOVCB = 45V, IE = 0BC107 VCB = 25V, IE = 0BC108 Tamb = 125 CVCB = 45V, IE = 0BC107 VCB = 25V, IE = ADC CurrenthFEIC = 10 A, VCE = 5VB GroupC GroupIC = 2mA, VCE = 5 VBC 107BC 108A GroupB GroupC Group40100110110110200420--4508002204508 00-Base Emitter Saturation VoltageVBE (Sat)
BC107/BC108 Series Low Power Bipolar Transistors Page 2 20/04/06 V1.0 Absolute Maximum Ratings Description Symbol BC107 BC108 Unit Collector-Emitter Voltage VCEO 45 25 Collector-Base Voltage CBO 50 30V Emitter-Base Voltage VEBO 6.0 5.0 Collector Current Continuous IC 0.2 A Power Dissipation at Ta = 25°C Derate above 25°C
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