Transcription of Bootstrap Circuitry Selection for Half Bridge Configurations
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Bootstrap Circuitry Selection for Half Bridge Configurations
1 SLUA887 August2018 SubmitDocumentationFeedbackCopyright 2018,TexasInstrumentsIncorporatedBootstr apCircuitrySelectionfor half -BridgeConfigurationsApplicationRepo rtSLUA887 August2018 BootstrapCircuitrySelectionfor half -BridgeConfigurationsMamadouDiallo,H ighPowerDriversABSTRACTD rivingMOSFETsin half -bridgeconfigurationspresentmanychal lengesfor thosechallengesis generatingbiasfor the bootstrapcircuittakescareof this ,TI's 620 Vhalf-bridgegatedriverwith interlockto presentthe differentcomponentsin a bootstrapcircuitand how to properlyselectthemin orderto ensurepredictableswitchingof the of to to BootstrapDiodeReverseRecoveryTime(Zoomed Out)..55HB_HSRingingEffectson (Rboot= 0 Ohms)..77 VDD/HB-HSFastRampUp (Rboot= ).. of Tables1 IntroductionWhenusinghalf-bridgeconfigur ations,it is necessaryto generatehigh-sidebias to drivethe gateof thehigh-sideFET referencedto the of the mostpopularand cost effectiveway fordesignersto do so is the use of a bootstrapcircuitwhichconsistsof a capacitor,a diode,a resistorand applicationreportwill explainhow this circuitworks,the key componentsof the bootstrapcircuitsand theirimpactin the app notewill put emphasison half -bridgegatedrivesusingdriverswith no built-inbootstrapdiode,whichgivesdesigne rsflexibilityand reducespowerdissipationin the gatedriverIC.
to the gate driver supply pins. Figure 8 below shows a good layout example using UCC27710 with all bootstrap components located near the gate driver IC minimizing any effects of parasitic inductances and reducing the high peak currents path of the bootstrap circuit. It is also important to separate high voltage power and low voltage signal traces.
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