Transcription of BSIM4.3.0 MOSFET Model
{{id}} {{{paragraph}}}
Example: bankruptcy
BSIM4.3.0 MOSFET Model
MOSFET Model - User s ManualXuemei (Jane) Xi, Mohan Dunga, Jin He, Weidong Liu, Kanyu M. Cao, Xiaodong Jin, Jeff J. Ou, Mansun Chan, Ali M. Niknejad, Chenming HuProject Director: Professor Chenming HuProfessor Ali Niknejad Department of Electrical Engineering and Computer SciencesUniversity of California, Berkeley, CA 94720 Copyright 2003 The Regents of the University of CaliforniaAll Rights Developers: Professor Chenming Hu (project director), UC Berkeley Professor Ali M. Niknejad(project director), UC Berkeley Dr. Xuemei (Jane) Xi , UC Berkeley Dr. Jin He , UC Berkeley Mr. Mohan Dunga, UC BerkeleyDevelopers of BSIM4 Previous Versions: Dr.
Chapter 6: Body Current Models 6-1 6.1 Iii Model6-1 6.2 IGIDL Model6-2 Chapter 7: Capacitance Model 7-1 7.1 General Description7- 1 7.2Methodology for Intrinsic Capacitance Modeling7-3 7.3Charge-Thickness Capacitance Model (CTM)7-9 7.4Intrinsic Capacitance Model Equations7-13 7.5Fringing/Overlap Capacitance Models7-19 Chapter 8: High-Speed/RF ...
Loading..
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: