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BSIM4.3.0 MOSFET Model

MOSFET Model - User s ManualXuemei (Jane) Xi, Mohan Dunga, Jin He, Weidong Liu, Kanyu M. Cao, Xiaodong Jin, Jeff J. Ou, Mansun Chan, Ali M. Niknejad, Chenming HuProject Director: Professor Chenming HuProfessor Ali Niknejad Department of Electrical Engineering and Computer SciencesUniversity of California, Berkeley, CA 94720 Copyright 2003 The Regents of the University of CaliforniaAll Rights Developers: Professor Chenming Hu (project director), UC Berkeley Professor Ali M. Niknejad(project director), UC Berkeley Dr. Xuemei (Jane) Xi , UC Berkeley Dr. Jin He , UC Berkeley Mr. Mohan Dunga, UC BerkeleyDevelopers of BSIM4 Previous Versions: Dr. Weidong Liu, Synopsys Dr. Xiaodong Jin, Marvell Dr. Kanyu (Mark) Cao, UC Berkeley Dr. Jeff J. Ou, Intel Dr. Xuemei (Jane) Xi, UC Berkeley Professor Chenming Hu, UC BerkeleyWeb Sites:BSIM4 web site with BSIM source code and documents: ~ Model Council: ~CMCT echnical Support: Dr.

5.3Asymmetric and Bias-Dependent Source/Drain Resistance Model5-4 5.4 Drain Current for Triode Region5- 5 5.5 Velocity Saturation5- 7 5.6Saturation Voltage Vdsat 5-8 5.7Saturation-Region Output Conductance Model5-10 5.8Single-Equation Channel Current Model5- 16

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