Transcription of BSS138 - N-Channel Logic Level Enhancement Mode Field ...
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BSS138 - N-Channel Logic Level Enhancement Mode Field ...
DATA Semiconductor Components Industries, LLC, 2005 November, 2021 Rev. 61 Publication Order Number: BSS138 /DN-Channel Logic LevelEnhancement Mode FieldEffect TransistorBSS138 General DescriptionThese N Channel Enhancement mode Field effect transistors areproduced using onsemi s proprietary, high cell density, DMOS technology. These products have been designed to minimize on stateresistance while provide rugged, reliable, and fast switchingperformance. These products are particularly suited for low voltage,low current applications such as small servo motor control, powerMOSFET gate drivers, and other switching A, 50 V RDS(on) = @ VGS = 10 V RDS(on) = @ VGS = V High Density Cell Design for Extremely Low RDS(on) Rugged and Reliable Compact Industry Standard SOT 23 Surface Mount Package This
Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS ... R JA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
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