Transcription of BSS138DW - Diodes Incorporated
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BSS138DW - Diodes Incorporated
BSS138DW Document number: DS30203 Rev. 13 - 2 1 of 6 January 2014 Diodes Incorporated BSS138DW DUAL N- channel enhancement MODE field EFFECT TRANSISTOR Product Summary V(BR)DSS RDS(ON) max ID max TA = +25 C 50V @ VGS = 10V 200mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Load Switch Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BV DSS R DS(ON) Max I D Max T A = +25°C 50V 3.5Ω @ V GS = 10V 200mA capable, and manufactured in IATF Description and Applications This MOSFET has been designed to minimize the on-state resistance (R DS(ON)) yet maintain superior switching performance, making it ideal
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