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Cleaning procedures for glass substrates

Cleaning procedures for glass substrates INRF Application note Process names: SOAPCLEAN + SOLVENTCLEAN + HCLCLEAN + HN03 CLEAN + AQUAREGIA Overview glass slides wafers are often cleaned by a solvent clean followed by a dionized water (DI) rinse, followed by a mild acid clean, DI rinse and blow dry. This is a level-1 process and required basic INRF safety certification. The use of dangerous chemicals requires that the user may not perform the process alone. Time needed The total process takes approximately 50 minutes. Materials needed Soap solution Acetone Methanol Dilute hydrochloric acid (30%) Dilute nitric acid (30%) Pyrex bath containers Soap clean (SOAPCLEAN) Most slides and glass surfaces can be effectively cleaned with soapy water.

Cleaning procedures for glass substrates INRF Application note ... Overview . Glass slides wafers are often cleaned by a solvent clean followed by a dionized water (DI) rinse, followed by a mild acid clean, DI rinse and blow dry. ... (do not exceed 55 deg C). Place silicon wafer in warn acetone bath for 10 minutes. Remove and place in methanol ...

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RCA-1 Silicon Wafer Cleaning - INRF

www.inrf.uci.edu

oxidative desorption and complexing with H2O2-NH4OH-H2O (RCA1). A second RCA-2 clean (SC-2) is often used H2O2-HCI-H2O to further clean the surface. RCA-1 clean is used to remove organic residues from silicon wafers. In the process, it oxidizes the silicon and leaves a thin oxide on the surface of the wafer, which should be removed

  Silicon, Cleaning, Wafer, 2h2o, Rca 1 silicon wafer cleaning

SOP Wet Silicon Solvent Clean - University of California ...

www.inrf.uci.edu

not wet it. Since oxide is hydrophilic and pure silicon is hydrophobic, a non-wetting surface is clean of oxides. Blow dry with nitrogen and store in a clean, dry environment. The 2% solution …

Deposition - INRF

www.inrf.uci.edu

Thin dielectric films are deposited using plasma enhanced chemical vapor deposition (PECVD) or remote plasma chemical vapor deposition (RPCVD) of SiO2, Si3N4 or a-Si. The source gases for the PECVD SiO2 films are 5% SiH4 in N2 plus N2O; for SixNy films source gases include 5% SiH4 in N2 plus NH3 and N2.

  Chemical, Vapor, Deposition, Chemical vapor deposition

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Cleaning Procedures for Silicon Wafers

www.inrf.uci.edu

Cleaning Procedures for Silicon Wafers INRF application note Process name: SOLVENTCLEAN + RCA01 + HFDIP . W. Kern and J. Vossen, Thin Film Processes, Academic Press: New York, 1978, Ch V-1 . W. Kern and Ed., Handbook of Semiconductor Cleaning Technology, Noyes Publishing: Park Ridge, NJ, 1993 Ch 1. Checklist

  Procedures, Silicon, Cleaning, Wafer, Cleaning procedures for silicon wafers

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