Transcription of CMOS image sensor fabrication technologies Pixel design ...
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LectureNotes5 CMOSI mageSensor DeviceandFabrication CMOS imagesensor fabricationtechnologies Pixeldesignandlayout Imagingperformanceenhancementtechniques Technologyscaling,industrytrends Microlens Color lterarrayEE392B:DeviceandFabrication5-1 ModernCMOSD eviceStructureEE392B:DeviceandFabricatio n5-2 ImagingIs Di erentfromDigitalLogicFeaturesDigitalLogi cImagingSilicideImprovescontactresistanc eAbsorbslight{ low photosensitivityIncreasedjunctionleakage STIE nablestighterdesignrulesLeadsto largerdark currentduetodefectsfromstressShallow junctionReducesshort-channele ectReducesquantume ciencyformediumto longwavelengthlightLower power supplyvoltageReducespower consumption,enablesdevicescalingReducesh eadroomfor signalswingLower thresholdvoltageImprov}
\A high performance active pixel sensor with 0.18 m CMOS color imager technology," IEDM Tech. Dig., pp. 555-558 (2001) EE 392B: Device and Fabrication 5-10. Epi Substrate Thickness Tailoring P+-substrate (more costly) cuts down on carrier di usion due to red and
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