Transcription of Complementary Low-Threshold MOSFET Pair
{{id}} {{{paragraph}}}
vishay SiliconixSi1555DL Document Number: 71079S13-0631-Rev. F, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: Low-Threshold MOSFET PairFEATURES TrenchFET Power MOSFET Material categorization:For definitions of compliance please :a. Surface mounted on 1" x 1" FR4 board. PRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A) at VGS = at VGS = at VGS = - V - at VGS = - V - at VGS = - V - Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free)Marking CodeRB XXLot Traceabilityand Date CodePart # CodeYYSOT-363SC-70 (6-LEADS)641235 Top ViewS1G1D2D1G2S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) ParameterSymbol N-Channel P-ChannelUnit 5 s Steady State 5 s Steady State Drain-Source VoltageVDS20- 8 VGate-Source Voltage VGS 12 8 Continuous Drain Current (TJ = 150 C)aTA = 25 CID = 85 C Drain CurrentIDM 1 Continuous Source Current (Diode Conduction) Power DissipationaTA = 25 = 85 Junction and Storage Temperature Range TJ, Tstg- 5
Vishay Siliconix Si1555DL www.vishay.com 6 Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 This document is subject to change without notice. Threshold Voltage V
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
{{id}} {{{paragraph}}}
COMPLEMENTARY PAIR ENHANCEMENT MODE, COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, LM4702 Driving a MOSFET Output Stage, 12: MOSFET enhancement and depletion, 12: MOSFET (enhancement and depletion mode) Characteristics, Half-bridge MOSFET, MOSFET, De-Lite Amplifier, To the Published Amplifier Circuits, CSD18563Q5A