Transcription of CoolSiC Trench MOSFET Combining SiC …
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silicon CARBIDECoolSiC Trench MOSFETC ombining SiC PerformanceWith silicon RuggednessISSUE 3 June/July 2017 inside this issueOpinion | Market News | Industry News | PCIM EuropePCIM 2017 Young Engineering Awards | PCIM 2017 Best PaperPower Measurement | Products | Website Locator Cover 27/06/2017 09:06 Page 1 REDEXPERT The world s most accurate AC loss model Filter settings for over 20 electrical and mechanical parameters Inductor simulation and selection for DC/DC converters Ability to compare inductance/current and temperature rise/DC current using interactive measurement curves#REDEXPERTREDEXPERT. W rth Elektronik s online platform for simple component selection and performance Available in seven languages Online platform based on measured values No login required Order free samples directly Direct access to product 126/06/2017 15 3 2017 Power Electronics Europe 3 EditorAchim ScharfTel: +49 (0)892865 9794 Fax: +49 (0)892800 132 Email: EditorChris DavisTel: +44 (0)1732 370340 Financial ManagerClare JacksonTel: +44 (0)1732 370340 Fax: +44 (0)
SILICON CARBIDE CoolSiC Trench MOSFET Combining SiC Performance With Silicon Ruggedness ISSUE 3 – June/July 2017 …
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