Transcription of CoolSiC Trench MOSFET Combining SiC …
{{id}} {{{paragraph}}}
silicon CARBIDECoolSiC Trench MOSFETC ombining SiC PerformanceWith silicon RuggednessISSUE 3 June/July 2017 inside this issueOpinion | Market News | Industry News | PCIM EuropePCIM 2017 Young Engineering Awards | PCIM 2017 Best PaperPower Measurement | Products | Website Locator Cover 27/06/2017 09:06 Page 1 REDEXPERT The world s most accurate AC loss model Filter settings for over 20 electrical and mechanical parameters Inductor simulation and selection for DC/DC converters Ability to compare inductance/current and temperature rise/DC current using interactive measurement curves#REDEXPERTREDEXPERT. W rth Elektronik s online platform for simple component selection and performance Available in seven languages Online platform based on measured values No login required Order free samples directly Direct access to product 126/06/2017 15 3 2017 power Electronics Europe 3 EditorAchim ScharfTel: +49 (0)892865 9794 Fax: +49 (0)892800 132 Email: EditorChris DavisTel: +44 (0)1732 370340 Financial ManagerClare JacksonTel: +44 (0)1732 370340 Fax: +44 (0)1732 360034 Reader/Circulation Enquiries Perceptio
SILICON CARBIDE CoolSiC Trench MOSFET Combining SiC Performance With Silicon Ruggedness ISSUE 3 – June/July 2017 www.power …
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
{{id}} {{{paragraph}}}
MOSFET, Power, MOSFET for Power Factor Correction Applications, Voltage Power MOSFET switching, Voltage Power MOSFET switching parameters: Testing, Power MOSFET, Power MOSFETs, Modules, and Gate Drivers, A MOSFETPowerAmplifier with ErrorCorre, MOSFET power, Power MOSFET Basics, Texas Instruments, They affect power-supply efficiency Power, MARCH 2015