Transcription of 反応性スパッタリング法による Cr–N 作製とその特性
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反応性スパッタリング法による Cr–N 作製とその特性
65 6 (2001)502 508. Cr N .. 1 2 2. 1 . 2 . J. Japan Inst. Metals, Vol. 65, No. 6 (2001), pp. 502 508. 2001 The Japan Institute of Metals Formation and Properties of Cr N Films by DC Reactive Sputtering Yukio Ide1, Hidenori Era2 and Katsuhiko Kishitake2. 1 Material Engineering Department, Yamaguchi Prefectural Industrial Technology Institute, Ube 755 0151. 2 Department of Materials Science and Engineering, Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu 804 8550. Cr N films were deposited using a dc reactive sputtering apparatus equipped with an optical emission spectroscope(OES). and the behavior of some species excited in the plasma was monitored by OES during sputtering. The films deposited were characterized with respect to the chemical composition, crystal structure and wear resistance.
503 Fig. 1 Schematic diagram of reactive DC magnetron sputter-ing apparatus. Fig. 2 Typical spectra of chromium and nitrogen in sputter-ing. (sputtering power＝300 W, argon partial pressure＝0.020
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