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碳化硅功率器件技术综述与展望 - CSEE

40 6 Mar. 20, 2020 2020 3 20 Proceedings of the CSEE 2020 1741 DOI 0258-8013 (2020) 06-1741-12 TM ( 310027) A Recent Review on Silicon Carbide Power Devices Technologies SHENG Kuang, REN Na, XU Hongyi (College of Electrical Engineering, Zhejiang University, Hangzhou 310027, Zhejiang Province, China) ABSTRACT: Silicon carbide power devices has the advantage of blocking higher voltage, working at higher temperature and having lower conduction resistance.

门极可断晶闸管(gate turn-off thyristor,GTO)器件为 双极型器件,适用于4.5~10kV 以上的高压范围。 2008年Semisouth发布了第一款常关型的SiC JFET 器件,TranSiC 发布了SiC BJT。Infineon 也在2012 年发布了第一款SiC 开关器件产品JFET 器件。随

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