碳化硅功率器件技术综述与展望 - CSEE

1 40 6 Mar. 20, 2020 2020 3 20 Proceedings of the CSEE 2020 1741 DOI 0258-8013 (2020) 06-1741-12 TM ( 310027) A Recent Review on Silicon Carbide Power Devices Technologies SHENG Kuang, REN Na, XU Hongyi (College of Electrical Engineering, Zhejiang University, Hangzhou 310027, Zhejiang Province, China) ABSTRACT: Silicon carbide power devices has the advantage of blocking higher voltage, working at higher temperature and having lower conduction resistance.

2 For more than 20 years, it has attracted extensive attention from many domestic and oversea research institutions and commercial companies. Firstly, this paper classified different silicon carbide devices and described their developments in recent years. Diodes, junction field effect transistor (JFET), metal-oxide- semiconductor field effect transistor (MOSFET), insulator gate bipolar transistor (IGBT) and gate turn-off thyristor (GTO) devices were discussed and their performances were compared.

3 Finally, the development of silicon carbide devices was summarized and the trend of development was given. KEY WORDS: silicon carbide (SiC); power device; diodes; junction field effect transistor (JFET); metal-oxide- semiconductor field effect transistor (MOSFET); insulator gate bipolar transistor (IGBT); gate turn-off thyristor (GTO) (silicon carbide SiC) 20 SiC SiC SiC 0 (2018 YFB0905703) (51777187 U1766222) National Key R&D Program of China (2018 YFB0905703); Project Supported by National Natural Science Foundation of China (51777187, U1766222).

4 (silicon Si) 600V Si (metal-oxide-semiconductor field effect transistor MOSFET) Si (insulator gate bipolar transistor IGBT) ~ Si IGBT 175 C 20 (silicon carbide SiC) SiC 3 10 3 SiC 2001 Infineon SiC SiC SiC (junction field effect transistor JFET) MOSFET JFET MOSFET ~10kV BJT IGBT (gate turn-off thyristor GTO)

5 ~10kV 2008 Semisouth SiC JFET TranSiC SiC BJT Infineon 2012 SiC JFET 1742 40 2010 Cree Rohm MOSFET [2] 2015 Rohm MOSFET Infineon 2017 MOSFET[3] SiC SiC JFET SiC MOSFET SiC IGBT SiC GTO 1 SiC SiC 3 PiN (Schottky barrier diode SBD) (junction barrier Schottky diode JBS) 3 1 JBS PiN 2001 SiC JBS Cree ST Infineon ~ SiC JBS 50A Rohm ~ SBD 40A[4] N+ Nd P+ N+ Nd N+ Nd P+ (a) (b) (c) PN 1 3 SiC Fig.

6 1 Structure of three types SiC Diode ( ~10kV ) PiN 2012 SiC PiN cm2[5] GeneSiC 8kV/2A 15kV/1A PiN SiC PiN 2005 Cree 10kV/50A SiC PiN 23%[6] SiC PiN PiN 1 SiC 1 SiC Tab. 1 Summary of blocking and forward voltage of SiC diodes /kV /V /A SBD 5 [9] 40 [4] 40 PiN [10] 10 20 [11] 10 5 50 [6]

7 27 [2] 8 2 [12] 10 <5 20 [13] 15 1 [12] JBS/MPS 2 [7] 5 3 [14] 10 20 [15] 50 [16] 1200 50 1700 50 SiC PN (merged PiN Schottky diode)

8 JBS P P 2~4 [7] [8] 10 Infineon 5600A/cm2 18 Cree Infineon 2 SiC 2014 SiC 6 1743 / 8 420121610203040 0 /AInf ineonCR EE 2 Cree Infineon Fig. 2 Surge capability of devices from Cree, Infineon ~ SiC [17] ~5kV SiC [18] 4~6 SiC ~ 50A[19] 10kV SiC JBS [20] ~ SiC 40A[21] SiC JBS [22] SiC JBS JBS [23] MPS MPS [8] [7] 33~35 Infineon 10 PiN 10kV/2A PiN [21]

9 SiC JFET SiC JFET PN 3(a) SiC P 2008 SemiSouth JFET cm2 SiC TI-JFET [24] 2009 Sheridan SiC JFET cm2 SiC JFET (a) (b) USCi casecode N+ N+Nd PP ZLJFETSi MOSFETP+P+ 3 JFET Fig. 3 Structure of JFET SiC ~ SiC JFET 25A SiC JFET MOSFET SiC JFET PN PN SiC JFET ~1V SiC JFET 2 SiC JFET (MOSFET\ IGBT) SiC JFET Semisouth SiC JFET 2013 IGBT SiC USCi JFET 3(b)

10 [44] MOSFET SiC JFET Si MOSFET\ IGBT USCi JFET 650V/ 85A 63A SiC MOSFET SiC MOSFET 1744 40 [27] 2000 Chung (NO) 20cm2/Vs [28] [29] 2010 SiC MOSFET Cree MOSFET(double implantation MOSFET DMOSFET) 4(a) 2010 SiC MOSFET SiC/SiO2( ) 10 m 6 m 12m cm2 cm2[3] 2015 Cree MOSFET(central implant MOSFET CIMOSFET) 5(a) [12] JFET P JFET cm2 150 C cm2[30] DMOSFET (0001) DMOSFET JFET