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Electrical Variability due to Layout Dependent …
Electrical Variability due to Layout Dependent Effects: analysis , quantification , and mitigation on 40 and 28nm SOC DesignsMark analysis and Discussions 40nm CMOS Technologya)Transistor variations: Vth, Idsat, Ioffb)Cell timing and leakage 2 Layout Dependent variations (context Dependent ) :LOD,STI, (RTA) Introduction We focus on stress effects including Diffusion Spacing Effects (OSE) and Well Proximity Effects (WPE). Cadence tool LEA is used to analyze stress effects as results of Layout context. Device and cell Variability due to stress are analysed. mitigation strategies for lower systematic Variability are 3 Unintentional stress: LOD and LODeffect is due to mechanical compressive stress induced at boundary of OD.
Electrical Variability due to Layout Dependent Effects: Analysis, Quantification, and Mitigation on 40 and 28nm SOC Designs Mark Zwolinski mz@ecs.soton.ac.uk
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