Transcription of Energy-Efficient High-Power IGBTs
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Energy-Efficient High-Power IGBTs
Energy-Efficient High-Power IGBTs (From 600V to 4500V)IXYS Corporation (NASDAQ: IXYS) offers the broadest IGBTs product portfolios in the power semiconductor industry; designers can choose from the largest selection of devices be they 600V, 650V, 1200V, or other higher voltage rated the combina-tion of its eXtreme-light Punch-Through (XPT ) technology and advanced igbt process, IXYS is able to achieve low energy losses and exceptional device ruggedness while still maintaining low on-state ciency Through TechnologyXPT Technology AdvantagesThin wafer technologyReduced thermal resistanceLow energy lossesFast switchingLow tail currentHigh current densitiesPositive temperature coefficient of VCE(sat)Eoff @ 150oC[mJ/mm2] 0, TrenchTrench XPT SlowPlanar XPT MediumPlanar XPT FastTrench XPT MediumTrench XPT Fast-25% EoffFigure 3: Trade-off performance [Eoff vs. VCE(sat)]VCE(sat)(V)Total igbt losses [W]Figure 2: Total energy loss vs. frequencySwitching frequency [kHz]8005101520706050403020100 Standard TrenchXPTIXYS also possesses an advanced 4th generation Trench igbt process.
Energy-Efficient High-Power IGBTs (From 600V to 4500V) IXYS Corporation (NASDAQ: IXYS) offers the broadest IGBTs product portfolios in the power semiconductor industry; designers can
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