Transcription of GaN Device for Highly Efficient Power Amplifiers - fujitsu.com
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GaN Device for Highly Efficient Power Amplifiers - fujitsu.com
GaN . GaN Device for Highly Efficient Power Amplifiers .. Long Term Evolution . LTE. HEMT High Electron Mobility GaN . Transistor GaN-HEMT .. GaN-HEMT . GaN . GaN-HEMT . GaN-HEMT . Abstract fujitsu has been developing gallium nitride high electron mobility transistors (GaN- HEMT) for small transmitter ampli ers for Long Term Evolution (LTE) base stations. The use of GaN-HEMT in Highly ef cient transmitter ampli ers has attracted much attention because of its high breakdown voltage characteristics. High ef ciency ampli ers with high gain are needed to decrease the Power consumption and size of base stations. This paper describes the development of high- Power GaN-HEMT for LTE base stations. First, we introduce the advantages of GaN-HEMT and GaN-based Power ampli ers. Then, issues to be solved in the early developing stage of GaN- HEMT are focused on and the current status is described. Ef ciency data of Power ampli ers are shown. Finally, the future outlook is discussed in detail.
fujitsu. 62, 4（ 07, 2011） 409 高効率電力増幅用ganデバイス gan-hemtの開発技術 前章の課題を解決するために今回開発したトラ ンジスタ構造を図-2（b）に示す。
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