GaN Device for Highly Efficient Power Amplifiers - fujitsu.com

1 GaN . GaN Device for Highly Efficient Power Amplifiers .. Long Term Evolution . LTE. HEMT High Electron Mobility GaN . Transistor GaN-HEMT .. GaN-HEMT . GaN . GaN-HEMT . GaN-HEMT . Abstract fujitsu has been developing gallium nitride high electron mobility transistors (GaN- HEMT) for small transmitter ampli ers for Long Term Evolution (LTE) base stations. The use of GaN-HEMT in Highly ef cient transmitter ampli ers has attracted much attention because of its high breakdown voltage characteristics. High ef ciency ampli ers with high gain are needed to decrease the Power consumption and size of base stations. This paper describes the development of high- Power GaN-HEMT for LTE base stations. First, we introduce the advantages of GaN-HEMT and GaN-based Power ampli ers. Then, issues to be solved in the early developing stage of GaN- HEMT are focused on and the current status is described. Ef ciency data of Power ampli ers are shown. Finally, the future outlook is discussed in detail.

2 fujitsu . 62, 4, p. 407-412 07, 2011 407. GaN .. GaN . GaN . LTE Long Term Evolution 50 V . LTE . GaN .. SiC SiC .. GaN . GaN . HEMT High Electron GaN-HEMT . Mobility Transistor . HEMT .. GaN-HEMT . 1980 . GaN . GaAs . GaN GPS . LED LED GaN . -1 IT . Si GaAs . GaN gan hemt -2 a . GaN AlGaN . 2 2 . HEMT. 48 V 28 V Si GaAs .. GaN .. 2 . W/cm/K . MV/cm cm /Vs . /cm2 cm/s . GaAs . Si 1012 1300 1 107 10 2 . 1012. 2000-4000 7. GaAs MESFET 10 . SiC 1012 600 2 107 . 1013 1500 10. 7. gan hemt . GaN .. 2000 GaN . -1 GaN -2 a HEMT . of material parameter of gallium nitride (GaN) with other materials.. 408 fujitsu . 62, 4 07, 2011 . GaN .. 1 . 2 . SiN . 3 . n . AlGaN HEMT . 2 . GaN . SiC . 1 m a GaN-HEMT .. SiN . n gan hemt . n . AlGaN . 2 . GaN . 1 m SiC . b GaN-HEMT . -2 GaN-HEMT . structures and surface topology. 1 . GaN-HEMT .. 2 . -2 b . GaN-HEMT . 3 . HEMT n . GaN . 1 . Surface-charge-controlled . -2 b . -2 a GaAs .. fujitsu . 62, 4 07, 2011 409.

3 GaN . -3 . 100 Hz . -3 a -3. b -3 b .. GaN .. GaN-HEMT . 2 .. GaN-HEMT .. GaN-HEMT . -1 . GaN-HEMT . MOVPE Metalorganic Vapor . Phase Epitaxy . SiC SiC . MOVPE GaN n AlGaN . n GaN -4 36 mm GaN-HEMT .. n GaN 3 . AlGaN .. m SiN -1 GaN-HEMT . gan hemt .. 1/1000 .. mA/mm . mA/mm .. +2 V +2 V. 500 500 +1 V. +1 V. 0V 0V. -1 V -1 V. 0 0. 0 25 50 0 25 50. V V . a b . -3 GaN-HEMT . characteristics of GaN-HEMT. 410 fujitsu . 62, 4 07, 2011 . GaN . W-CDMA . GaN-HEMT . 63 V 174 W . 3 . 4 .. 2 Push-pull 50 V GaN-HEMT . 250 W W-CDMA 2 . -5 2 GHz . Digital pre-distortion DPD . GaN-HEMT 5 .. GaN-HEMT . 40 . 50 . 6 .. 7 . -1 . GaN .. kHz MHz .. 8 . -1 . HEMT .. PC AC . GaN-HEMT .. -4 GaN-HEMT . Power ampli er.. 100 G.. 40 G.. 10 G .. Hz .. W-CDMA WiMAX. X LTE 4 . 1 G IMT-2000 . 100 M . / PC/ /. Home . 100 k 2005 2010 2015 2020.. -5 GaN-HEMT . prospect of GaN-HEMT. fujitsu . 62, 4 07, 2011 411. GaN . 2 T. Kikkawa et al. An Over 200-W Output Power gan hemt Push-Pull Ampli er with High GaN-HEMT Reliability IEEE Int Microwave Symp.

4 Dig.. June 2004 . 3 K. Joshin et al. A 174 W high-ef ciency GaN.. HEMT Power ampli er for W-CDMA base station n GaN applications IEDM Tech. Dig. December Surface-charge-controlled 2003 .. 4 HEMT . 50 V 250 W . GaN 5 IMT-2000 . GaN-HEMT . GaN-HEMT LTE 6 WiMAX .. GaN-HEMT 7 W . HEMT . 1 T. Kikkawa et al. Surface-Charge Controlled 8 . AlGaN/GaN- Power HFET without Current Collapse HEMT . and Gm Dispersion IEDM Tech. Dig. December 2001 .. GaN-HEMT . GaN-HEMT .. GaN-HEMT .. 412 fujitsu . 62, 4 07, 2011.