Transcription of 先端GaN-HEMTデバイス技術 - Fujitsu
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先端GaN-HEMTデバイス技術 - Fujitsu
GaN-HEMT GaN-HEMT Technology for Future Applications WiMAX Worldwide Interoperability for Microwave Access GaN HEMT High Electron Mobility Transistor GaN-HEMT MIS Metal Insulator Semiconductor 3 V 800 mA/mm 320 V GaN Abstract We investigated future power applications of GaN high electron mobility transistors (HEMTs) after successfully developing a high-efficiency GaN-HEMT amplifier for mobile Worldwide Interoperability for Microwave Access (WiMAX) base stations.
material properties also make the GaN-HEMT a good candidate for future power electronic devices, which must operate with a high drain current and high voltage. Fabricated normally-off GaN-HEMT devices showed a threshold voltage of 3 V, maximum drain current ... Fig.3-Characteristics for GaN MIS-HEMT device
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