Transcription of Practical considerations when comparing SiC and GaN in ...
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Practical considerations when comparing SiC and GaN in ...
1 Practical considerations when comparing SiC and GaN in power applications Anup Bhalla, PhD. VP Engineering UnitedSiC, Inc. Abstract Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems to be easily upgraded to get the benefits of wide band-gap devices right now. Wide band-gap devices what they promise Wide band-gap (WBG) semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are the hot topics of the moment, promising anything from universal wireless charging to power converters shrunk to almost no size.
60 milliohm device . This results in reduced gate-drive power and elimination of the danger of spurious turn-on due to drain positive-going dV/dt pushing spikes of current through the Miller capacitance into the gate-drive circuit. • There is energy lost in switching, E oss, associated with C oss. In the 650V
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