Transcription of GaN Reliability Report 2018 - MACOM
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GaN Reliability Report 2018 - MACOM
GaNReliability Report2018 2018 MACOM All Rights Reserved GaN-on-Silicon Reliability and Qualification Report A summary analysis of application-specific stress testing methodologies and results demonstrating the Reliability of Gallium Nitride on Silicon (GaN-on-Si) RF power transistors for commercial wireless basestation infrastructure INTRODUCTION The performance and Reliability benefits of GaN-on-Si for RF and microwave applications have been well documented since the 2006 qualification of first-generation GaN-on-Si technology for volume deployment into military and defense applications.
2018 MACOM All Rights Reserved For these tests, MACOM GaN-on-Si power transistors were operated at 50V drain voltage and drain current of 80 milliamps per millimeter, producing thermal dissipation
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