Transcription of High-NA EUV Lithography Exposure Tool
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High-NA EUV Lithography Exposure Tool
Public22 January 2021, EUV-FELW orkshop, Japan / CloudHigh-NA EUV Lithography Exposure tool For EUVroadmapextensionCarl Zeiss SMT GmbH, Oberkochen, GermanyPaul GraeupnerASML Veldhoven, The NetherlandsJan van Schoot, Jos Benschop, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Jo Finders PublicEUV product NA, 13 nmEUVwafers/hours(wph) are basedon 30mJ/cm 1)185wph@20mJ/cm2 /150wph@30mJ/cm 2) 170wph@20mJ/cm 3) Throughput upgradeNA, Half pitchWavelengthProduct: Matched Machine Overlay (nm)|Throughput(wph)ProductstatusDefinit ionDevelopmentReleasedNXE:3600D nm | 160 wphNEXT< nm | >220 wphNXE:3400C nm | 135 wph2/ 145 ,8 nmEXE:5000 nm | 185 wph1 EXE:5200< nm | >220 wphEUVL Sep 2020 Slide enabling affordable scaling beyond current continuous imaging, overlay and productivity improvements in line with customers advanced node HVM productivity reached 170 wafers per hour Productivity at higher Exposure dose continues to increaseSPIE Feb 2021 Slide 3 ATP test: 26x33mm2, 96 fields, 20m
Public 22 January 2021, EUV-FEL Workshop, Japan / Cloud High-NA EUV Lithography Exposure Tool For EUV roadmap extension Carl Zeiss SMT GmbH, Oberkochen, Germany Paul Graeupner ASML Veldhoven, The Netherlands Jan van Schoot, Jos Benschop, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Jo Finders .
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