High-NA EUV Lithography Exposure Tool

1 Public22 January 2021, EUV-FELW orkshop, Japan / CloudHigh-NA EUV Lithography Exposure tool For EUVroadmapextensionCarl Zeiss SMT GmbH, Oberkochen, GermanyPaul GraeupnerASML Veldhoven, The NetherlandsJan van Schoot, Jos Benschop, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Jo Finders PublicEUV product NA, 13 nmEUVwafers/hours(wph) are basedon 30mJ/cm 1)185wph@20mJ/cm2 /150wph@30mJ/cm 2) 170wph@20mJ/cm 3) Throughput upgradeNA, Half pitchWavelengthProduct: Matched Machine Overlay (nm)|Throughput(wph)ProductstatusDefinit ionDevelopmentReleasedNXE:3600D nm | 160 wphNEXT< nm | >220 wphNXE:3400C nm | 135 wph2/ 145 ,8 nmEXE:5000 nm | 185 wph1 EXE:5200< nm | >220 wphEUVL Sep 2020 Slide enabling affordable scaling beyond current continuous imaging, overlay and productivity improvements in line with customers advanced node HVM productivity reached 170 wafers per hour Productivity at higher Exposure dose continues to increaseSPIE Feb 2021 Slide 3 ATP test: 26x33mm2, 96 fields, 20mJ/cm2 / 30mJ/cm2 Throughput [wafersper hour]17016015018014011010090807060504030 20100130120 14Q1 14Q2 14Q3 14Q4 15Q3 15Q4 16Q2 16Q4 17Q1 NXE:3350 Bat customers 17Q3 17Q3 18Q1 NXE:3400 Bat customersNXE:3350 BASML factoryNXE:3300 Bat customersNXE:3300 BNXE:3350 BNXE:3400 BNXE:3400 BASML factoryNXE.

2 3400 BASML factory (proto) 19Q1 19Q2 NXE:3400 CAt customersNXE:3400 Bat customers 19Q3 NXE:3400 CASML factory 19Q4 20Q1 21Q1 NXE:3400C24 NXE:3400 CASML factoryRoadmap > 200 wphNXE:3400 Cat customersNXE:3600 DASML factoryNXE:3600 DPublicEUV collector transmission degradation meeting targetAverage degradation rate on NXE:3400B/CSPIE Feb 2021 Slide 4 NXE:3300 BNXE:3350 BNXE:3400B201520172019202010090807060504 03020100020406080 Collector transmission [%]GigapulseDegradation rate [%/GP]Power [W] (average)2500204060801000204060801000204 06080100120140160averageaverage180200 NXE:3400B/CNXE:3400C< %/GP>3x higher source power>20% increase in average collector transmissionImproved availability due to longer collector lifetimePublicWafers exposed on EUV systems grows exponentiallySPIE Feb 2021 Slide 5Q1Q2Q3Q4Q12020Q2Q3Q42019854553383155627 64 Mln26 MlnCumulativewafersexposedon EUVN umber of NXE:3400x systems shipped (cumulative)Numberof NXE:3400x systems shipped(cumulative)PublicCustomer flagship products are poweredbyEUVS ource.

3 , Sep 2020 Slide 7 OutlineHigh-NA agenda Why High-NA Infrastructure Architecture High-NA EUVR esolution, nm = k1x Wavelength/ NA Wavelength, nm19851990199520002005201020152020 KrF(248nm)ArF(193nm)EUV ( )101001000 = 1 High-NA ( )SPIE Febr. 2020 Slide 8 ArFImmersion (193nm)Over 35 years 2 orders of magnitude resolution reductionby working on Wavelength, NA and k1i-line (365nm)436 g-line365 i-line248 KrF193 ArFandImmersionNA+67%XT:1400 NXT:1950iNXE:3400 high -NANA+45%PublicEUVL 2020 Slide 9 EXE platform to further enable affordable shrink (3 nm Logic)Total patterning cost comparison: immersion, NXE, EXELELE-2LE-3LE-4 LELE-2LE-3LE-4 LELEI mmersionNXE (EUV )EXE (EUV )(20mJ)(30mJ)100200300400 Relative costper layer0 Non-litho costLitho costSource: Jan van Schootet al.

4 (ASML) High-NA EUV Lithography Exposure tool progress SPIE 2019 PublicHigh-NA contrast reduces Local CDUkey to continue Moore s law: Resist, Dose, ContrastSPIE Febr. 2020 Slide 10 Whereby:s=resist blurDsize=dose to sizeILS =image log slopep=pitch Minimize Local variation by Improved resist: absorption , blur , chemical shot noise Maximize contrast: High-NA , advanced maskPronetofail =3 1 2 Resist DoseContrast(blur/chemistry)10nm CH, 20mJ/cm2 1000 photons30% absorption 300 photons30% determines the edge 100 photonsEUV comes with less photons/JPublicHigh-NA contrast reduces Local CDU and defectsKey to continue Moore s law: Resist, Dose, Contrast1:1 CH Ta Mask MOR Annular scaled 45 mJ/cm 3 [nm]Half Pitch [nm] PSM 75 mJ/cm High-NA : smaller CH s at same doseresistSlide 11threshold20nm 1.

5 1 Contact Holesx-position [nm]0 10 20 30 40 Aerial image intensity [au] Sep 2020 Whereby:a=resist absorptionf=proportionality factor with egQEDsize=dose to sizeILS=image log slopeArea=area containing photons contributing to LCDU 3 , =3 1 2 DoseContrastResistYen, Hansen, EUVL workshop (2018) Edge photons and contrast determine hole size variability Center photons open developer path to bottom pipe cleaners High-NA improves both 1:1 Contact 10 20 30 40x-position [nm]PronetofailPublicEUVL Sep 2020 Slide 1220nm CH s: Defects down by several ordersImpact of High-NA 2: more center photonsGijsbertRispens, SPIE AL (2020) [nm] 33 mJ/cm Aerialimage intensity(norm.)

6 010203040 Xposition [nm] 45 mJ/cm Aerialimage intensity(norm.) ~ 2x [nm]CD [nm]Printing contact holesRoadblocksBridgingholesProadblock~ 010log(Defect rate)Amount of centerphotons [ ]+ 10% photons ~ 1 order lessdefectsDe Bisschop, JM3 (2018) 45 mJ/cm 33 mJ/cm Public14nm CH s: expected to be better than aerial NA+ [nm]Aerialimage [ ]aerialimage intensityEXE:5000 NXE:3400 EUVL Sep 2020 Slide localphotons : LCDU anddefectivitybetter despiteSE at smallerresolutionSingle ExposeDouble ExposePublicEUVL Sep 2020 Slide 14 OutlineHigh-NA agenda Why High-NA Infrastructure Architecture High-NA manufacturingSummaryPublic201820192020 Dose [mJ/cm ]574539 LWRunb[nm] [10-6mJ nm ] [mJ/cm ]666553 LCDU [nm] [10-6mJ nm ] Sep 2020 Slide 15 Continuous resist improvement for multiple use casesProgress is needed moving forwardEUVJ-2107 Non-CARNon-CARNon-CARR esolution: (P26 LinesandSpaces)Resist type11 Resist system.

7 CAR Chemical Amplified resistAll data exposed with NA= scannerEUVJ-2107 Non-CARNon-CARCARR esist type12013201520172019202001234Z-Factor [10-6mJ nm ]2014201620182012P32 LSP26 LS2019202001234Z-Factor [10-6mJ nm ]2018P40 CHLines and SpacesContact HolesCARNon CAR*Z-factor= Res3x LWR2x DoseZ-factor comparison only valid at equal contrastResolution: (P40 HexagonalPillars/CH)Public201820192020 Dose [mJ/cm ]574539 LWRunb[nm] [10-6mJ nm ] [mJ/cm ]666553 LCDU [nm] [10-6mJ nm ] Sep 2020 Slide 16 Continuous resist improvement for multiple use casesProgress is needed moving forwardEUVJ-2107 Non-CARNon-CARNon-CARR esolution: (P26 LinesandSpaces)Resist type11 Resist system: CAR Chemical Amplified resistAll data exposed with NA= scannerEUVJ-2107 Non-CARNon-CARCARR esist type12013201520172019202001234Z-Factor [10-6mJ nm ]2014201620182012P32 LSP26 LS2019202001234Z-Factor [10-6mJ nm ]2018P40 CHLines and SpacesContact HolesCARNon CAR*Z-factor= Res3x LWR2x DoseZ-factor comparison only valid at equal contrastResolution.

8 (P40 HexagonalPillars/CH)Non-CARCARHP12nmLine s and SpacesPublicPSI High-NA resist evaluation for lines and pillars/CHResolution[hp]13nm12nm11nm10nm InorganicResist75 mJ/cm 58 mJ/cm 62 mJ/cm 58mJ/cm Sep 2020 Slide 179nm8nm82 mJ/cm 59 mJ/cm ChemicallyAmplifiedResist(CAR)InorganicR esistChemicallyAmplifiedResist(CAR)Resol ution[hp]24nm20nm18nm16 mJ/cm 21 mJ/cm 19 mJ/cm 33 mJ/cm 22nm22 mJ/cm 17 mJ/cm 58 mJ/cm 52 mJ/cm Ongoing imaging benchmarking of High-NA tools (PSI, BMET5, NXE)Reference:Contrast-loss investigationforthecharactierizationof resistandexposure tool performancesTimoth e Allenet, SPIE-AL, 11517-16 PublicCXRO/LBNL shows resist capability for Lines and PillarsEUVL Sep 2020 Slide 18 CARL ines andSpacesResolution(nm)11nm10nmInpriaRes istLines andSpaces9nm8nmInpriaResistRegularPillar sIlluminationF2X frequencydoubling13nm12nm11nm8nmInpriaRe sistTip-2-TipsSMOMPR esist& Feature14P2814P35F2X frequencydoubling12nm13nmC.

9 Anderson et al., CXRO, SPIE 2020 PublicEUVL Sep 2020 Slide 19 OutlineHigh-NA agenda Why High-NA Infrastructure Architecture High-NA manufacturingSummaryPublicEUVL Sep 2020 Slide 20 High-NA system architecture finalizedNew FramesImproved thermal and dynamic control with larger opticsLens & illuminator NA for high contrast high transmissionImproved Source positionAllows for larger transmission, compatible with NAWafer Stage2x increase in accelerationMask Stage4x increase in accelerationImproved metrology2~3x improvement in overlay/focusPublicEUV High-NA requires an anamorphic anaML reflectionMask MoSiMultilayerAngle of incidence [deg] mm132 mmMask4x26 mm33 prints a Full Field4 prints a Half Field11 deg required for ~ ~8deg~ iso~8deg~ anaNote: for simplicity M3D effects are ignored, only multi-layer effect taken into accountSPIE Febr.

10 2020 Slide 21 PublicSPIE Febr. 2020 Slide 22 High-NA brings throughput >185 wphFast stages enable high throughputAcceleration of wafer stage ~ of mask stage ~ , RS currentperformanceWS 2x, RS 4xHFFF35 Throughput [300/hr]Source Power/Dose [W/(mJ/cm ]Throughput for various source powers and Watt20mJ/cm PublicRecent EUV power improvement allows higher doseServicing concept for High-NA identical to sourceSPIE Febr. 2020 Slide 23 Continuous source improvements: Allow for more throughput Allow for more dose Improved Local CDUS ource power [W]200820102012201420162018202020222024 TargetFuture targetDevelopmentProductionModularity of the vessel reduces repair times1000200300400500 PublicHigh-NA projection optics design availableLarger elements with tighter specificationsNA examplesExtreme aspheres enabling further improved wavefront / imaging performanceBig last mirror driven byHigh-NAObscuration enableshigher opticsTransmission Mask levelWafer levelSPIE 2019 Slide 24 PublicHigh NA optics design supports significant reduction in wavefront RMSsystemsrms[nm]NXE:3350 BNXE.)