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History of FET technology and the move to NexFET™

44As the power MOSFET s performance improved, it followed the evo-lution of CMOS technology introduced in the late 70s to produceintegrated circuits. Typically, power FET technology uses depreciatedCMOS foundries, following the leading edge with a time delay in theorder of three-to-five years with a feature size of: 1 m, m, m, m, m, m, etc. Geometry scaling leads todrop-in supply voltage of very large scale integrated (VLSI) circuitsused in electronic applications like computing, portable electronicsand telecommunications.

technology a de facto standard area for low-voltage power MOS-FETs. However, the large trench wall area leads to a large value of built-in capacitors.

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