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process changes such as high- κ gate dielectrics and strain enhancement, and in the near future, new structures such as gate-all-around (GAA); alternate high-mobility channel materials, and new 3D integration schemes allowing heterogeneous stacking/integration. These innovations be introduced at a rapid pace, and hence understanding, modeling ...

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2021 IRDS More than Moore

irds.ieee.org

Yoshiyuki Nonogushi, Kyoto Institute of Technology Kafil M Razeeb, Tyndall James Rohan, Tyndall Luca Roselli, IUNET Stefano Saggini, IUNET Hiroshi Toshiyoshi, University of Tokyo Eric Yeatman, Imperial College London Flexible/Wearable Electronics Benjamin Iñiguez, URV (team leader) Alessandra Costanzo, IUNET Danilo DeMarchi, IUNET

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2020 EDITION - irds.ieee.org

irds.ieee.org

P1770™, IEEE P149™, IEEE 1720™, etc.) are registered trademarks or service marks of The Institute of Electrical and Electronics Engineers, Incorporated. All other products, company names or other marks appearing on these sites are the

  Electronic, Institute

IRDS 2021 More Moore

irds.ieee.org

• Memory technologies • DRAM technologies • Flash technologies • Emerging non-volatile-memory (NVM) technologies More Moore targets bringing PPAC value for node scaling every 2−3 years [2]: • (P)erformance: >15% more operating frequency at scaled supply voltage • (P)ower: >30% less energy per switching at a given performance

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Breakdown in Solid Dielectrics - BU

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When solid dielectrics are subjected to high electric fields, failure occurs due to electrostatic compressive forces which can exceed the mechanical compressive strength. If the thickness of the specimen is d0 and is compressed to thickness d under an applied voltage V, then the electrically developed compressive stress is in equilibrium.

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BSIM4.3.0 MOSFET Model - CMOSedu.com

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