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process changes such as high- κ gate dielectrics and strain enhancement, and in the near future, new structures such as gate-all-around (GAA); alternate high-mobility channel materials, and new 3D integration schemes allowing heterogeneous stacking/integration. These innovations be introduced at a rapid pace, and hence understanding, modeling ...
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2021 IRDS More than Moore
irds.ieee.orgYoshiyuki Nonogushi, Kyoto Institute of Technology Kafil M Razeeb, Tyndall James Rohan, Tyndall Luca Roselli, IUNET Stefano Saggini, IUNET Hiroshi Toshiyoshi, University of Tokyo Eric Yeatman, Imperial College London Flexible/Wearable Electronics Benjamin Iñiguez, URV (team leader) Alessandra Costanzo, IUNET Danilo DeMarchi, IUNET
2020 EDITION - irds.ieee.org
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IRDS 2021 More Moore
irds.ieee.org• Memory technologies • DRAM technologies • Flash technologies • Emerging non-volatile-memory (NVM) technologies More Moore targets bringing PPAC value for node scaling every 2−3 years [2]: • (P)erformance: >15% more operating frequency at scaled supply voltage • (P)ower: >30% less energy per switching at a given performance
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