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Intrinsic Silicon Properties

ECE 410, Prof. A. MasonLecture Notes Silicon Properties Read textbook, section , , Intrinsic semiconductors undoped ( , not n+ or p+) Silicon has intrinsiccharge carriers electron - hole pairs are created by thermal energy Intrinsic carrier concentration ni= , at room temp. function of temperature: increase or decrease with temp? n = p = ni, in Intrinsic (undoped) material n number of electrons, p number of holes mass-action law, np = ni2 applies to undoped and doped materialECE 410, Prof. A. MasonLecture Notes Silicon Properties doping, adding dopantsto modify material Properties n-type = n+, add elements with extra an electron (arsenic, As, or phosphorus, P), Group V elements nn concentration of electrons in n-type material nn= Ndcm-3, Nd concentration of donoratoms pn concentration of holes in n-type material Ndpn= ni2, using mass-action law always a lot more n than p in n-type material p-type = p+, add elements with an extra hole (boron, B) pp concentration of holes in p-type material pp= Nacm-3, Na concentration of acceptoratoms np concentration of electrons in p-type mat

Conduction in Semiconductors • doping provides free charge carriers, alters conductivity ... electrons more mobile than holes ⇒conductivity of n+ > p+ l t w A Mobility often assumed constant but is a function of Temperature and Doping Concentration. ECE 410, Prof. A. Mason Lecture Notes 6.4

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