Transcription of IRFZ46N - Infineon Technologies
{{id}} {{{paragraph}}}
Example: air traffic controller
IRFZ46N - Infineon Technologies
IRFZ46 NHEXFET Power MOSFET07/15/02 Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal = 55 VRDS(on) = ID = 53A SDGTO-220 ABAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts.
IRFZ46N HEXFET® Power MOSFET 07/15/02 Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Loading..
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
Related search queries
TP-584, York State Department of Taxation, York State Department of Taxation and, Your manual and automatic, Your manual and automatic CMMs with, Suffolk County Recording, Tulsa Area Community Resources, 2017:Nonresident Real Property, Nonresident Real Property Estimated Income, WIRES, INSULATORS AND PROTECTION TUBES, Wires, insulators and protection tubes metal sheathed thermocouple