Transcription of Irf9z24n - Infineon Technologies
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Irf9z24n - Infineon Technologies
IRF9Z24 NHEXFET Power MOSFETPD Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout @ TC = 25 CContinuous Drain current , VGS @ -10V-12ID @ TC = 100 CContinuous Drain current , VGS @ Drain current -48PD @TC = 25 CPower Dissipation45 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse Avalanche Energy 96mJIARA valanche current Avalanche Energy Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting torque, 6-32 or M3 screw10 lbf in ( m)Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunct
IRF9Z24N Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current …
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