Transcription of PD-91279E IRF3205
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PD-91279E IRF3205
IRF3205 HEXFET Power MOSFET01/25/01 Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal = 55 VRDS(on) = ID = 110A SDGTO-220 ABAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFET sare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the Process TechnologylUltra Low On-ResistancelDynamic dv/dt Ratingl175 C Operating TemperaturelFast SwitchinglFully Avalanche @ TC = 25 CContinuous Drain current , VGS @ 10V 110 ID @ TC = 100 CContinuous Drain current , VGS @ 10V 80 AIDMP ulsed Drain current 390PD @TC = 25 CPower Dissipation200 WLinear Derating CVGSGate-to-Source Voltage 20 VIARA valanche current 62 AEARR epetitive Avalanche Energy 20mJdv/dtPeak Diode Recovery dv/dt Junction and-55 to +
IRF3205 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse
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