Transcription of IRG4PC50W - Infineon Technologies
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IRG4PC50W - Infineon Technologies
PD - 91657B. IRG4PC50W . INSULATED GATE BIPOLAR TRANSISTOR. Features C. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) VCES = 600V. applications Industry-benchmark switching losses improve G VCE(on) max. = efficiency of all power supply topologies 50% reduction of Eoff parameter E @VGE = 15V, IC = 27A. Low IGBT conduction losses Latest-generation IGBT design and construction offers n-channel tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode).
IRG4PC50W www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 1 10 100 1000 1 10 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A)
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